Mitsubishi Electric Corporation

Shinsuke Godo

Atsunobu Kawamoto

Koji Yamamoto

Yukio Yasuda

Kazuhiro Nishimura

Kazuki Yamada

A control circuit for a semiconductor switching element includes a control terminal, a main electrode terminal, and a current sensing terminal, and controls the semiconductor switching element including a diode connected to the main electrode terminal or the current sensing terminal. The control circuit includes an overheat detection circuit, a current detection circuit, and an interruption circuit. The overheat detection circuit outputs an overheat detection signal when a temperature detected based on an output of the diode is equal to or higher than a predetermined set temperature. The current detection circuit outputs a current detection signal when an output value of the current sensing terminal is equal to or greater than a predetermined set current value. The interruption circuit turns off the semiconductor switching element when both the overheat detection signal from the overheat detection circuit and the current detection signal from the current detection circuit are input.

Control circuit for semiconductor switching element, and semiconductor device

An object of the present invention is to provide a semiconductor device capable of eliminating unevenness of current distribution in a plane. A semiconductor device according to the present invention is a semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate, the semiconductor device including an electrode pad which is arranged avoiding the transistor cell region on the semiconductor substrate and is electrically connected to a one-side current electrode of each of the cells, in which the transistor cell region contains a plurality of regions each of which has a different current drive capability from each other depending on a distance from the electrode pad.

Semiconductor device comprising regions of different current drive capabilities

The present invention has an object to provide a semiconductor device that has protective functions and is capable of achieving miniaturization and cost reduction. A semiconductor device according to the present invention includes a switching element, a drive circuit, and a control circuit. When a high-level drive control signal is output from the drive circuit, the control circuit stops driving of the switching element and charges an electric charge storing capacitor. When a low-level drive control signal is output from the drive circuit, the control circuit drives the switching element using electric charges stored in the electric charge storing capacitor.

Semiconductor device

A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state.

Power semiconductor device for igniter

A semiconductor device of the present invention includes a switching transistor, and a recovery diode and a snubber device which are mounted on a single conductive substrate (frame) on which the switching transistor is also mounted. The snubber device includes a SiC-MOSFET connected between an output terminal C and a reference terminal E of the switching transistor, a Zener diode formed between a gate terminal G and a drain terminal D of the SiC-MOSFET, and a resistor formed between the gate terminal G and a source terminal S of the SiC-MOSFET. The reference terminal E of the switching transistor, the source terminal S of the SiC-MOSFET, and an anode terminal of the recovery diode are commonly connected.

Semiconductor device and snubber device having a SiC-MOSFET and a Zener diode

A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than a predetermined voltage.

A semiconductor device includes: a parallel connection structurebetween a first node and a second node; a first snubber device and a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section. One terminal of the first snubber device is connected through the first node to one end of the parallel connection structure, the opposite terminal of the first snubber device is connected through a third node to one terminal of the second snubber device, and the opposite terminal of the second snubber device is connected through the second node to the opposite end of the parallel connection structure. Electric power is fed back to the power source section through the second and third nodes.

Growing community of inventors

Tokyo, Japan

Shinsuke Godo