Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Shinsuke Asada

Masaaki Taruya

Kazuhiro Watanabe

Takafumi Hara

Junji Fujino

Yuji Imoto

Yusuke Ishiyama

Seizo Fujimoto

Yoshihito Asao

Naoki Yoshimatsu

Yuetsu Watanabe

Kenjiro Nagao

Hiroshi Yoshida

Masaki Kato

Hiroshi Kobayashi

Satoshi Kondo

Yoshitaka Kimura

Dai Nakajima

Kiyoshi Arai

Mikio Ishihara

Taketoshi Shikano

Satoru Ishikawa

Hidetoshi Ishibashi

Daisuke Murata

Shohei Ogawa

Yusuke Kaji

Minoru Egusa

Yuki Yano

Takuya Oga

Yoshimitsu Takahata

An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

Semiconductor device with branch electrode terminal and method of manufacturing semiconductor device

The object of the present invention is to provide a semiconductor device capable of reducing the influence of gas generated from a resin to which a fire retardant is not added, and a power conversion device including the semiconductor device. The semiconductor device according to the present invention includes: a semiconductor element disposed on an insulating substrate; a case disposed around an outer edge of the insulating substrate, the case including an opening facing the semiconductor element; a sealing resin sealing the semiconductor element in the case; and a lid closing the opening of the case, wherein the sealing resin does not contain a fire retardant, the lid contains the fire retardant, and a space is provided between the sealing resin and the lid.

Semiconductor device and power conversion device

A semiconductor device includes an insulating substrate, a semiconductor element provided on the insulating substrate, a case frame, a press-fit terminal, and a sealing member provided on an inner side of an inner wall part on the insulating substrate to seal the semiconductor element. The case frame is made of an insulating material and includes an outer wall part, an inner wall part, a recess bottom surface forming a recess together with the outer wall part and the inner wall part. The press-fit terminal includes a base part, a body part, and a press-in portion. The base part is embedded in the recess bottom surface and the body part stands upright from the recess bottom surface such that the body part extends between the inner wall part and the outer wall part, and the press-in portion protrudes up out of the recess.

Semiconductor device having press-fit terminals disposed in recesses in a case frame

A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

Semiconductor device with a plate-shaped lead terminal

A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

Power semiconductor device

A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

Semiconductor device and method for manufacturing the same

A power semiconductor module () includes: an electrode plate () in which a body portion () and an external connection terminal portion () are integrally formed, and the body portion () is arranged on the same flat surface; a semiconductor chip () mounted on one surface (mounting surface) () of the body portion (); and a resin package () in which the other surface (heat dissipation surface) () of the body portion () is exposed, and the body portion () of the electrode plate () and the semiconductor chip () are sealed with resin. The heat dissipation surface () is the same surface as the bottom () of the resin package (); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.

Power semiconductor module

A power semiconductor module includes: a first metal substrate on which a power semiconductor device is mounted; a second metal substrate on which a power semiconductor device is not mounted; and an electrically insulating resin package which seals the first metal substrate and the second metal substrate. The back surface of the first metal substrate on the side opposite to the mounting surface of the power semiconductor device is made to expose outside the resin package to form a heat dissipation surface.

Power semiconductor module and its attachment structure

A resin welded body where a first resin part that is absorbent with respect to laser light and a second resin part that is transparent with respect to laser light are fitted together and the laser light is emitted to a predetermined position from the side of the second resin part to weld together the first and the second resin parts and form a joint portion between both resin parts, wherein on either the first or the second resin part there is disposed a projection that comes into contact with the other resin part during the welding and regulates the sinking amount at the joint portion.

Resin welded body and manufacturing method thereof

A welding method and welding apparatus for resin members is provided in which dimensional accuracy of two resin members after welding can be secured and reduction in joining strength due to excessive laser irradiation can be prevented. In a method of superimposing a resin having a laser-transmitting property and a resin having laser absorptiveness and irradiating the resin members with a laser beam from the side of the laser-transmitting resin member to deposit the resin members on each other, irradiation with the laser beam is ended in accordance with reduction in the approaching speed of the two resin members during the irradiation with the laser beam.

Welding method and welding apparatus for resin member

A method for producing a welded resin material contains steps of: superimposing a resin member having transmissibility to laser light and a resin member having absorptivity to laser light to form a contact part where the resin members are in contact with each other; forming a closed space that is adjacent to the contact part and faces one end of the contact part; and radiating the laser light from the resin member having transmissibility while pressing the resin members to each other through the contact part, so as to heat the contact part to melt a resin at the contact part, housing a resin excluded from the contact part through melting in the closed space, solidifying the resin melted at the contact part to weld the resin members.

Welded resin material

A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.

Semiconductor pressure sensor, manufacturing method thereof, and die for molding semiconductor pressure sensor

Semiconductor pressure sensor and die for molding a semiconductor pressure sensor

A semiconductor pressure sensor can reduce the damage of bonding wires to increase their life time even under an environment in which the temperature and pressure change rapidly and radically. The semiconductor pressure sensor includes a package () made of a resin and having a concave portion (), a lead () formed integral with the package () by insert molding, with its one end exposed into the concave portion () and its other end extended from the package () to the outside, a sensor chip () arranged in the concave portion () for detecting pressure, and a bonding wire () electrically connecting the sensor chip () and the lead () with each other. An interface between the lead () and the package () on the side of the concave portion () is covered with a first protective resin portion () of electrically insulating property, and the bonding wire () is covered with a second protective resin portion () that is softer than the first protective resin portion ().

Growing community of inventors

Tokyo, Japan

Shinsuke Asada