Nec Corporation

Tdk Corporation

Nec Energy Devices, Ltd.

Shinsaku Saitho

Tamaki Toba

Haruo Urai

Nobuyuki Ishiwata

Yoshihiro Nonaka

Kiyotaka Shimabayashi

Hitoshi Ishikawa

Noboru Yoshida

Ikiko Shimanuki

Kazuhiko Inoue

Tetsuhiro Suzuki

Daisuke Kawasaki

Takehiro Noguchi

Shinako Kaneko

Hideaki Sasaki

Kazuaki Matsumoto

Yuukou Katou

Hiroaki Honjo

Makiko Uehara

Hiroaki Tachibana

Hiroshi Hatakeyama

Ippei Waki

The present invention relates to an electrolyte solution comprising a supporting salt, a nonaqueous solvent containing a compound having a viscosity of 1.0 mPa-s or less in an amount of more than 50% by volume in the nonaqueous solvent, and a halogenated cyclic acid anhydride. According to the present invention, an electrolyte solution capable of suppressing gas generation is provided.

Nonaqueous electrolyte solution and secondary battery

The present invention relates to an electrolytic solution comprising a cyclic dicarboxylic acid ester represented by the specific formula, and the secondary battery comprising the same. According to the present invention, the electrolytic solution comprising an additive which can improve a characteristics in a secondary battery and a secondary battery comprising the same can be provided.

Electrolytic solution and secondary battery

It is an object of the present invention to provide an electrolytic solution capable of suppressing gas generation. The present exemplary embodiment is an electrolytic solution comprising a supporting salt, a nonaqueous solvent that dissolves the supporting salt, a cyclic sulfonic acid ester compound represented by predetermined formula (1), and an acid anhydride. According to the exemplary embodiment, an electrolytic solution capable of suppressing gas generation can be provided.

The present invention relates to an electrolyte solution for a lithium secondary battery, which contains a sulfonate compound represented by a specific formula and carboxylic anhydride having one or more C&#x2550;C double bonds, and a lithium secondary battery using the same.

Secondary battery

A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.

Magnetic random access memory and method of manufacturing the same

A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Thin-film magnetic head and nonmagnetic body filled concave portion formed on a pole layer and magnetic storage apparatus using the same

Thin-film magnetic head with nonmagnetic body filled concave portion formed on a pole layer and magnetic storage apparatus using the same

To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer. A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

A thin film magnetic head includes a recording pole layer that is divided into a tip portion, a wide rear portion, a flare portion, and a yoke portion as viewed from the air bearing surface (ABS). The tip portion and the wide rear portion directly contact a write gap layer. Part of the wide rear portion has a greater width that the tip portion. The wide rear portion is provided between the tip portion and the flare portion to reduce magnetic reluctance. Accordingly, it is possible to improve the pattern accuracy of the tip portion width by providing the flare portion, which reflects a large quantity of light, far from the ABS, while preventing an increase of the magnetic reluctance.

Thin film magnetic head, manufacturing method thereof and magnetic storage

Thin-film magnetic head and magnetic storage apparatus using the same

To prevent the high-frequency characteristic from deteriorating due to a narrow track. A thin-film magnetic head of the present invention is produced by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element facing to an ABS plane, a shared pole layer serving as an upper shielding layer and a lower pole layer, and a write gap layer laminated in order on an insulating substrate, by forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of the ABS plane, and by forming an upper pole layer on the write gap layer and second flattening layer nearby the ABS plane. Because magnetic easy axis of the upper pole layer along the ABS plane is oriented in the thickness direction of the upper pole layer, the high-frequency characteristic in the magnetization rotation mode is obtained.

Growing community of inventors

Tokyo, Japan

Shinsaku Saitho