Sony Corporation

Shinro Ikeda

Motonobu Takeya

Takeharu Asano

Katsuyoshi Shibuya

Osamu Goto

Katsunori Yanashima

Yasuhiko Suzuki

Masao Ikeda

Tomonori Hino

Satoru Kijima

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0&#x3c;y/x&#x2266;0.011 and x&#x2267;450 &#x3bc;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0&#x3c;H&#x2266;70&#xd7;10(cm), and Z=y/x, D is controlled to satisfy the relation 0&#x3c;D&#x3c;(2/CZ)cos(1&#x2212;HCZ), where C (cm) is the proportionality constant when the radius of curvature of the substrate &#x3c1; (cm) is expressed as 1/&#x3c1;=CZ.

Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate

A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030&#xb0; C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070&#xb0; C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

Nitride semiconductor, semiconductor device, and manufacturing methods for the same

Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x&lE;0.011 and x&gE;450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H&lE;70&times;10 (cm), and Z&equals;y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos (1&minus;HCZ), where C (cm ) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;&equals;CZ.

Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device

Semiconductor device

Growing community of inventors

Miyagi, Japan

Shinro Ikeda