Sony Corporation

Sony Interactive Entertainment Inc.

Sony Computer Entertainment Inc.

Kyowa Kirin Co., Ltd.

Shinpei Yamaguchi

Tomoyuki Hirano

Toshifumi Wakano

Keiji Tatani

Takayuki Shinohara

Yusuke Tanaka

Shunsuke Maruyama

Hayato Iwamoto

Takashi Nagano

Keiichi Nakazawa

Yasushi Okumura

Masahiro Ikeda

Shuji Manda

Hidehiko Morisada

Tomo Matayoshi

Kaori Tai

Isamu Terasaka

Takamasa Tanikuni

Junko Sano

Masumi Murakami

An object of the present invention is to provide a novel IL-2 variant which has improved selectivity for IL-2Rand selectively activates Tregs. The present invention relates to an IL-2 variant, a method for producing the IL-2 variant, a composition and a therapeutic agent for an immune disease, comprising the IL-2 variant, a method for increasing selectivity of IL-2 for IL-2Rαβγ, a method for improving an affinity of IL-2 for an IL-2Rα subunit, a method of reducing an affinity of IL-2 for at least one of an IL-2Rβ subunit and an IL-2Rγ subunit, and a method for selectively activating regulatory T cells.

IL-2 variant

An image acquisition unitacquires a subject image in which a subject is positioned in front of a background with a single color. An eye gaze information determination unitdetermines an eye direction and a viewpoint position of a user wearing an HMD and provides the eye direction and the viewpoint position for a display control unitThe display control unitperforms chroma-key composition such that the subject included in the subject image may become a foreground image with respect to a background image and thereby generates a display image according to the viewpoint position of the user. The display control unitdetermines an orientation of the subject such that the subject may be made to face the viewpoint position of the user, in a case where the viewpoint position has been changed.

Information processing device and image generation method for projecting a subject image onto a virtual screen

Display screen or portion thereof with transitional graphical user interface

Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

There is provided an apparatus including an image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), including a light receiving unit, formed in a semiconductor substrate, which receives incident light, an anti-reflection film formed on a back-surface side of the semiconductor substrate in which the light receiving unit is formed, and a silicon oxide film, formed on a back-surface side of the anti-reflection film, which has a refractive index lower than a silicon nitride film and has a higher density in a back-surface side than in a front-surface side thereof.

Image sensor, imaging apparatus, and apparatus and method for manufacturing image sensor

Disclosed herein is a method for manufacturing a semiconductor device, the method including the step of forming a gate electrode that contains a metal over a semiconductor substrate with intermediary of a gate insulating film, the step including the sub-steps of, forming a first gate electrode layer that defines a work function of the gate electrode on the gate insulating film, forming a second gate electrode layer that has a barrier property for underlayers on the first gate electrode layer, and forming a third gate electrode layer of which resistance is lower than a resistance of the first gate electrode layer on the second gate electrode layer by chemical vapor deposition.

Method for manufacturing semiconductor device and semiconductor device

A music production apparatus includes a melody data storage operative to store music data for a plurality of melody elements forming music, a condition storage operative to store a condition for combining melody elements and a condition related to an attribute applicable when playing the melody element, an element selector operative to determine, at a predetermined point of time, whether a melody element should be allocated to a track where no melody elements are allocated, and to select, when it is determined that a melody element should be allocated to the track, a melody element that should be allocated to the track by referring to the condition for combining melody elements stored in the condition storage, an attribute determination unit operative to determine an attribute applicable when playing the selected melody element, and a sound production unit operative to read music data for the selected melody element from the melody data storage, to apply the attribute determined by the attribute determination unit, and to produce a sound signal that should be output to a speaker, using the music data for the melody element allocated to the track.

Music production apparatus and method of producing music by combining plural music elements

Disclosed is a solid-state image pickup apparatus including a semiconductor substrate, a photoelectric converter, a transfer gate, an insulating layer, a first silicon layer, and a pixel transistor portion. The photoelectric converter converts light energy of incident light into electrical energy and obtains a signal charge. The photoelectric converter is formed on a surface side in the semiconductor substrate. The transfer gate reads the signal charge from the photoelectric converter, and the transfer gate is formed on the semiconductor substrate adjacent to the photoelectric converter. The insulating layer is formed on the photoelectric converter in the semiconductor substrate. The first silicon layer is formed on the insulating layer. The pixel transistor portion amplifies and outputs the signal charge read by the transfer gate. The pixel transistor portion is formed on the insulating layer with the first silicon layer being an active region.

Solid-state image pickup apparatus and method of manufacturing the same

A method for producing a semiconductor device, the method includes the steps of: forming a hard mask layer with a mask opening on a semiconductor substrate in which is formed a source region; forming a side wall mask on the side wall of the mask opening; forming a trench by using the side wall mask and the hard mask layer as a mask in such a way that the trench reaches the source region; removing the side wall mask; forming a gate electrode inside the mask opening and the trench, with a gate insulating film interposed thereunder; forming a side wall on the side wall of the gate electrode; and forming a drain region on the surface of the semiconductor substrate which is adjacent to the gate electrode.

Method for production of semiconductor device

A semiconductor device which includes a field effect transistor having a gate electrode on the upper side of a semiconductor substrate, with a gate insulation film therebetween, wherein at least the gate insulation film side of the gate electrode includes a film containing hafnium and silicon.

Growing community of inventors

Tokyo, Japan

Shinpei Yamaguchi