Semiconductor Energy Laboratory Co., Ltd.

Shinpei Matsuda

Shunpei Yamazaki

Daisuke Matsubayashi

Kenichi Okazaki

Masahiko Hayakawa

Hiroyuki Miyake

Junichi Koezuka

Yoshiyuki Kobayashi

Haruyuki Baba

Yukinori Shima

Ryunosuke Honda

Kazuya Hanaoka

Akio Suzuki

Masayuki Sakakura

Kouhei Toyotaka

Shuhei Nagatsuka

Noritaka Ishihara

Yuki Hata

Hiroyuki Tomisu

Kiyoshi Kato

Masashi Tsubuku

Yutaka Shionoiri

Tomoaki Atsumi

Yuta Endo

Daisuke Kurosaki

Motoki Nakashima

Masashi Oota

Toshimitsu Obonai

Tsutomu Murakawa

Seiko Inoue

Daigo Ito

Yoshinori Ando

Hiroshi Kanemura

Yasutaka Suzuki

Kazuhiro Tsutsui

Kazuya Sugimoto

Etsuko Kamata

Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

Semiconductor device

A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.

To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

Semiconductor device and display device including the same

Semiconductor device comprising stacked transistors

Semiconductor device including a oxide semiconductor transistor

The semiconductor device includes a first insulating layer; a first oxide semiconductor; a first insulator containing indium, an element M (M is gallium, aluminum, titanium, yttrium, or tin), and zinc; a second oxide semiconductor; a source electrode layer; a drain electrode layer; a second insulator containing indium, the element M, and zinc; a gate insulating layer; and a gate electrode layer. The first and second oxide semiconductors each include a region with c-axis alignment. In the first and second oxide semiconductors, the number of indium atoms divided by sum of numbers of the indium atoms, element M atoms, and zinc atoms is &#x2153; or more. In the first insulator, the number of zinc atoms divided by sum of the numbers of indium atoms, element M atoms, and zinc atoms is &#x2153; or less.

Semiconductor device, method for manufacturing the same, and electronic device

A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.

Transistor, semiconductor device, and electronic device

A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.

Semiconductor device including transistor which includes first gate and second gate

Growing community of inventors

Kanagawa, Japan

Shinpei Matsuda