Oki Electric Industry Co., Ltd.

Lapis Semiconductor Co., Ltd.

Shinobu Takehiro

Masaki Yoshimaru

Satoshi Yamauchi

Toru Mori

Masao Okihara

A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.

Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same

A semiconductor device includes a semiconductor layer formed on part of an insulating layer. The semiconductor layer includes a diffusion region and a channel region. The insulating layer is etched so that the semiconductor layer is separated from the insulating layer below at least part of the diffusion region. The space left below this part of the semiconductor layer is filled by an etch stop film that also covers the side surfaces of the insulating layer. The etch stop film prevents contact holes targeted at the diffusion region from penetrating the insulating layer due to alignment error or defects in the semiconductor layer. Since the etch stop film is not present below the channel region, the electrical characteristics of the semiconductor device are not altered.

Semiconductor device and fabrication method with etch stop film below active layer

An LSI device includes a core region to which a first driving voltage is applied and an interface region to which a second driving voltage higher than the above first driving voltage is applied. The LSI device includes an SOI substrate and a device separation region for separating a SOI layer of the SOI substrate into the core region and the interface region. The thickness of the SOI layer of the core region is thinner than the thickness of the SOI layer of the interface region. The LSI device further includes first MOSFETs formed in the core region and in which the SOI layer of the core region is a fully depleted Si channel and second MOSFETs formed in the interface region and in which the SOI layer of the interface region is a fully depleted Si channel.

LSI device having core and interface regions with SOI layers of different thickness

In a pretreatment process, a silicon oxide film () with nitrogen content is formed on a semiconductor substrate (). In a segregation process executing heat treatment in an in-oxidiz-able gas atmosphere, a silicon nitride layer () segregates out at the interface of the silicon substrate () and the silicon oxide film (). After this, the unnecessary silicon oxide film () on the silicon nitride layer () is removed, and a silicon oxide layer () is formed beneath the exposed silicon nitride layer () with oxygen passing through the exposed silicon nitride layer (). Whereby, a gate electrode () is formed on the gate insulating film consisting of the silicon nitride layer () and the silicon oxide layer ().

Method for manufacturing a MOS transistor

A method of fabricating a semiconductor device wherein leakage current of a capacitor is reduced is provided. The method comprises steps of forming a lower electrode of the surface of a semiconductor substrate, forming a silicon nitride film over the lower electrode, applying a first heat treatment whereby the silicon nitride film is annealed in an atmosphere containing oxygen, forming a dielectric film containing alkaline earth metals over the silicon nitride film, applying a second heat treatment whereby the electric film is annealed in an atmosphere containing oxygen, and forming an upper electrode on the surface of the dielectric film.

Method of fabricating a semiconductor device

A method of fabricating a semiconductor device wherein leakage current of a capacitor is reduced is provided. The method comprises steps of forming a lower electrode the surface of a semiconductor substrate, forming a silicon nitride film over the lower electrode, applying a first heat treatment whereby the silicon nitride film is annealed in an atmosphere containing oxygen, forming a dielectric film containing alkaline earth metals over the silicon nitride film, applying a second heat treatment whereby the electric film is annealed in an atmosphere containing oxygen, and forming an upper electrode on the surface of the dielectric film.

A method for manufacturing a semiconductor device by laminating a plurality of ruthenium-type conductive electrodes and a dielectric film having a perovskite structure, includes forming a first conductive electrode at the semiconductor substrate, forming a first area where elements constituting the first conductive electrodes and elements constituting a first dielectric film are melded, forming a transitional layer by performing a heat treatment on the first meld area within a non-oxidizing atmosphere and forming the first dielectric film on the first conductive electrode. Accordingly, a transitional layer having a consistent composition can be formed with a high degree of efficiency at the interface of the ruthenium-type electrode and the dielectric substance having a perovskite structure, so that a capacitor structure employing a very thin dielectric film having a high dielectric constant can be produced with ease and at low cost.

Method for fabricating storage capacitor using high dielectric constant material

A method of manufacturing a semiconductor device, comprises the following steps of growing a dielectric film made of a dielectric material whose dielectric constant is improved by crystallization thereof, on a semiconductor substrate to utilize the dielectric film as a capacitor film, and applying a voltage to the semiconductor substrate in a plasma atmosphere to increase a grown interface temperature by &ldquo;dielectric heating&rdquo; upon growth of the dielectric film

Method of manufacturing semiconductor device by sputtering dielectric forming materials while selectively heating growing layer

In the fabrication of capacitors, a TiO,film is formed from a TiN film by means of heat-treatment within an atmosphere which does not contain oxygen. This serves to prevent the polysilicon which forms the bottom electrode from being oxidized during heat-treatment. Thus, once the bottom electrode has been formed on the silicon wafer, a TiN film and RuO,film are formed, and the silicon wafer is heat-treated in an atmosphere which does not contain oxygen. In this manner, a dielectric film that is a TiO,film and a top electrode that is a ruthenium film are obtained.

Fabricating method for semiconductor device

In a pretreatment process, a silicon oxide film (,) with nitrogen content is formed on a semiconductor substrate (,). In a segregation process executing heat treatment in an inert gas atmosphere, a silicon nitride layer (,) segregates out at the interface of the silicon substrate (,) and the silicon oxide film (,). In a high dielectric film forming process, the unnecessary silicon oxide film (,) on the silicon nitride layer (,) is removed, a high dielectric oxide layer (,) is formed on the exposed silicon nitride layer (,). Whereby, a gate electrode (,) consisting of the silicon nitride layer (,) and the high dielectric oxide layer (,) is formed.

Method for manufacturing a MOS transistor having multi-layered gate oxide

In a process where a capacitor using a BST film for a dielectric film is incorporated into a DRAM, the film is selectively removed by wet etching for forming a contact hole. For this purpose, a bottom electrode is formed and then an amorphous film is formed on the entire surface of a silicon wafer. And after forming a crystalline top electrode on this film, lamp heating is performed to crystallize only the area that is in contact with the electrode. Then wet etching is performed using a solution of hydrogen and ammonium fluoride (1:2), which allows removing only the amorphous area selectively.

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Tokyo, Japan

Shinobu Takehiro