Kabushiki Kaisha Toshiba

Kioxia Corporation

Toshiba Memory Corporation

Shinobu Sugimura

Koji Asakawa

Norikatsu Sasao

Masatoshi Sakurai

Tomoaki Sawabe

Seiji Morita

Satoshi Shirotori

Takuya Shimada

Yoshiyuki Kamata

Takeshi Okino

Ryosuke Yamamoto

Hitoshi Iwasaki

Masayuki Takagishi

Akira Fujimoto

Naoko Kihara

Tsutomu Nakanishi

Yuuzo Kamiguchi

Norihito Fujita

Seekei Lee

Katsuhiko Koui

Akihiko Takeo

Tomomi Funayama

Kazuyo Umezawa

Akiko Yuzawa

Kazuyo Morita

A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

Method for manufacturing metal fluoride-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.

Method for manufacturing indium-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3),

Compound, polymer, pattern forming material, pattern forming method, and method of manufacturing semiconductor device

According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

Polymer material, composition, and method of manufacturing semiconductor device

A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where Ris H or CH, each Ris a hydrocarbon group of Cwhere a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of Ccarbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.

Compound, polymer, pattern forming material, and manufacturing method of semiconductor device

A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (1) described below, wherein, Ris a hydrogen atom or a methyl group, each Rindependently is an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or an s-butyl group, and a monomer unit derived from a compound represented by a general formula (2) described below, wherein, Ris a hydrogen atom or a methyl group, each Rindependently is a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, or a t-butyl group.

Polymer for pattern forming material

According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 &#x3bc;m. The first surface includes an unevenness.

Template, method for manufacturing template, and pattern formation method

A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sporbital and 5 atom % or more carbon atoms having an sporbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.

Method of forming pattern, method of manufacturing semiconductor device, and pattern-forming material

A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.

Method of forming pattern and method of manufacturing semiconductor device

According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

Pattern formation material and pattern formation method

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Pattern forming material and pattern forming method

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.

Growing community of inventors

Yokohama, Japan

Shinobu Sugimura