Semiconductor Energy Laboratory Co., Ltd.

Shinobu Kawaguchi

Shunpei Yamazaki

Yasumasa Yamane

Yoshihiro Komatsu

Daisuke Yamaguchi

Toshikazu Ohno

Tomosato Kanagawa

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

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Kanagawa, Japan

Shinobu Kawaguchi