Sony Corporation

Sony Semiconductor Solutions Corporation

Shinnosuke Hattori

Toshiyuki Kunikiyo

Mitsunori Nakamoto

Yosuke Saito

Shuichiro Yasuda

Yuta Hasegawa

Takashi Kawashima

Toshio Nishi

Hajime Kobayashi

Masato Kanno

Miki Kimijima

Sae Miyaji

Yuta Inaba

To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layerprovided between the first electrode and the second electrode, in which the photoelectric conversion layerincludes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Photoelectric conversion element

There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer including an n-type dopant or a p-type dopant, and disposed on the first electrode side, and an ion source layer disposed between the resistance change layer and the second electrode.

Memory element and memory device

There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode.

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Tokyo, Japan

Shinnosuke Hattori