Electronics and Telecommunications Research Institute

Shinmo An

O-Kyun Kwon

Won Seok Han

Namje Kim

Miran Park

Tae-Soo Kim

Provided is an optical device including a radio frequency (RF) signal source configured to electrically provide an RF signal, a first diode configured to operate as a laser diode (LD) or an electro-absorption modulator (EAM) in response to the RF signal, a second diode configured to share an N region of the first diode, be serially connected to the first diode, and have a P region connected to a ground to operate as a capacitor for series push-pull operation with the first diode, and a resistor connected between the N region and the ground.

Optical device based on series push-pull operation

Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.

High-output power quarter-wavelength shifted distributed feedback laser diode

Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

Tunable semiconductor laser and operation method thereof

Provided is a polarization controller. The polarization controller includes a substrate, a first core disposed on the substrate and having a rectangular parallelepiped shape, a first cladding layer configured to cover the first core and the substrate and including a groove parallel to the first core in an edge of an upper end thereof, and a metal pattern disposed in the groove and including a first side surface and a bottom surface, which are adjacent to the first core.

Polarization controller

An optical signal generating apparatus according to an embodiment of the inventive concept includes a first optical intensity modulator for modulating a first optical signal to generate a 2-level (where N is a positive integer) second optical signal in the form of a binary signal, a first optical amplifier for amplifying the second optical signal to generate a third optical signal, and a second optical intensity modulator for modulating the third optical signal to generate a 2-level fourth optical signal in the form of a binary signal. The optical signal generating apparatus according to an embodiment of the inventive concept may generate a low-cost, high-quality optical signal by using an optical device to generate a multi-level optical signal. Additionally, the optical signal generating apparatus according to an embodiment of the inventive concept may generate a multi-level optical signal by sequentially performing optical modulation and optical amplification operations.

Optical signal generating apparatus and operating method thereof

Provided is a tunable laser device. The tunable laser device includes a lower clad layer, first to third quantum well patterns disposed on the lower clad layer and arranged in a first direction parallel to a top surface of the lower clad layer, an upper clad layer disposed on the first quantum well pattern, and first grating patterns disposed between the third quantum well pattern and the lower clad layer. The first to third quantum well patterns are arranged in the first direction parallel to a top surface of the lower clad layer, the upper clad layer includes a p-type conductive clad layer, the upper clad layer includes an n-type conductive clad layer, and the third quantum well pattern is electrically intrinsic. When a reverse bias is applied to the upper clad layer, the third quantum well pattern, and the lower clad layer, the third quantum well pattern is changed in refractive index.

Growing community of inventors

Daejeon, South Korea

Shinmo An