Tamura Corporation

Koha Co., Ltd.

Shinkuro Sato

Kazuyuki Iizuka

Yoshikatsu Morishima

Akito Kuramata

A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a GaOsubstrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the GaOsubstrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Semiconductor stacked body, method for manufacturing same, and semiconductor element

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a GaOsubstrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a GaOsubstrate; a buffer layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) crystal on the GaOsubstrate; and a nitride semiconductor layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the GaOsubstrate is no less than 1.0&#xd7;10/cm.

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Tokyo, Japan

Shinkuro Sato