Sumco Corporation

Toyota Jidosha Kabushiki Kaisha

Shinjirou Uchida

Sumio Miyazaki

Hiromichi Kinpara

Tetsuya Yamada

Masamitsu Fukuda

A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.

Method of manufacturing silicon on insulator substrate

An apparatus for evaluating an epitaxial layer, including pre-treating the epitaxial layer before evaluation of the epitaxial layer by making the epitaxial layer contact with a metal electrode by a capacitance-voltage measurement, the method comprising; applying carbon-bearing compound to a surface of the epitaxial layer; subsequently irradiating ultraviolet light to the surface of the epitaxial layer; and thereby forming an oxide film on the surface of the epitaxial layer. An apparatus for evaluating an epitaxial layer of an epitaxial wafer, the apparatus including a pretreatment unit for pre-treating an epitaxial wafer having a semiconductor wafer and an epitaxial layer formed on the semiconductor wafer, a metal-electrode which can be made contact with or vapor-deposited on the surface of the epitaxial layer of the epitaxial wafer which has been pre-treated in the pretreatment unit, a measuring electrode which can be made contact with or vapor-deposited on the semiconductor wafer, and a measuring unit which is connected to each of the electrodes and is used to measure physical properties of the epitaxial layer. The pretreatment unit includes an applying device for applying a carbon-bearing compound to a surface of the epitaxial layer, and an irradiation device for irradiating ultraviolet light to the surface of the epitaxial layer in an oxygen-bearing atmosphere.

Method for pre-treating epitaxial layer, method for evaluating epitaxial layer, and apparatus for evaluating epitaxial layer

A method for pre-treating an epitaxial layer performed before evaluation of the epitaxial layer by making the epitaxial layer contact with a metal electrode by a capacitance-voltage measurement, the method comprising; applying carbon-bearing compound to a surface of the epitaxial layer; subsequently irradiating ultraviolet light to the surface of the epitaxial layer; and thereby forming an oxide film on the surface of the epitaxial layer.

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Tokyo, Japan

Shinjirou Uchida