Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaisah Toshiba

Shinjiro Kojima

Hideo Matsuda

Masaru Ando

Wataru Takahashi

Tetsujiro Tsunoda

Hiroshi Matsumoto

Yasunori Usui

Makoto Hideshima

Seiichi Hirata

Kouji Araki

Takao Emoto

Toshihiro Kato

Yoshinari Uetake

Masami Iwasaki

Youichi Araki

Yoshimasa Kudo

Yukio Igarashi

Kazuyuki Nakashima

According to this invention, there is provided a semiconductor device including a TAB tape having through hole for an element, a plurality of leads integrally formed on the TAB tape, a semiconductor element connected to one end of each of the leads through a bump formed in the through hole for the element, a plurality of lead frames each connected to the other end of a corresponding one of the leads, and a mold resin sealed to cover the most part of the TAB tape, the leads, the semiconductor element, and the lead frames, wherein connection portions between the leads and the lead frames are linearly formed at equal pitches perpendicularly to an outer periphery of the semiconductor element opposite to the connection portions. Each of portions near positions where the leads are respectively connected to the lead frames is formed in a gull-wing shape. The straight end portions of the lead frames extend from ends of the lead frames to flexing points of the lead frames, and the lengths of the straight end portions are set at least 0.3 mm or more. In the mold resin, the thickness of a resin positioned at the upper portion of the semiconductor element is set to be smaller than that of a resin positioned at the lower portion of the semiconductor element.

Semiconductor device

A plurality of circuit boards are used and frames are attached to the circuit boards to surround the peripheral portions thereof. Since connection terminals electrically connected to the respective circuit boards are attached to the respective frames, a semiconductor device having semiconductor elements mounted at high density can be formed by stacking the first and second frames on each other and setting the respective connection terminals in contact with each other to electrically connect the circuit boards to each other.

A semiconductor element is formed in a semiconductor substrate. An electrode wiring pattern which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate. A metal bump is formed on the electrode wiring pattern. The metal bump contains zinc of 1 to 10% in mass percentage in addition to at least one element selected from a group consisting of tin, lead and aluminum a second metal bump is formed having a lower melting point than that of first bump. The second bump contains lead, tin and at least one of silver and copper.

Metal bump type semiconductor device and method for manufacturing the

A resin sealing type semiconductor apparatus includes semiconductor devices having electrodes. A plurality of leads include inner leads and outer leads, the former connected to the electrodes of the semiconductor devices by thin metal wires. A sealing resin layer covers at least the semiconductor devices and the inner leads. The outer leads, which are led out in one direction from the sealing resin layer, have two different types or more of pitches, the number of the pitches of each type being two or greater.

Resin sealing type semiconductor device having outer leads designed for

A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet to a molybdenum or tungsten disc, assures a uniform press contact because a warp on the silicon pellet is largely reduced in comparison with a conventional device. A silver sheet is omitted between an anode electrode post and the silicon pellet to absorb a warp on the pellet. It is only necessary to insert a molybdenum or tungsten disc there, instead, which is thinner than a counterpart of the conventional device. Between the cathode electrode of the silicon pellet and a cathode electrode post use is made of, in the place of a conventional molybdenum foil and silver cap, an annealed soft copper cap of better malleability and, in the place of conventional molybdenum disc, an inexpensive hard copper sheet of adequate thickness and rigidity, not annealed, which can assure uniform press contact with the cathode electrode surface which oppositely confronts a gate lead connection circuit of a cathode electrode post. Since the silicon pellet is not alloy-bonded to the molybdenum or tungsten disc, it is simple and easy to form a bevelled structure, and to perform a silicone insulating rubber coating operation, so as to obtain the anode-to-cathode withstand voltage of the silicon pellet. Thus an inexpensive press-contact flat type semiconductor device of a long life can be provided which ensures more uniform press contact than a conventional semiconductor device.

Press-contact flat type semiconductor device

A packaged semiconductor device having a semiconductor chip mounted on a bed part, a first molded layer which seals the bed part and the semiconductor chip such that the back of the bed part is exposed, a heat sink under the exposed back of the bed part and with a prescribed distance between it and the back of the bed part a second molded layer which is formed such that it covers the outside of the heat sink and the first molded layer, and also fills the gap between the exposed surface of the bed part and the heat sink, and leads which are disposed such that they pass through the second molded layer and their ends are in the first molded layer, and which are connected via bonding wires to the internal terminals of the semiconductor chip.

Recessed thermally conductive packaged semiconductor devices

A soft metal plate having substantially equal hardness as emitter electrodes formed of soft metal is disposed between the emitter electrodes and a heat buffer metal plate formed of hard metal, and pressure applied to the emitter electrodes is shared by the soft metal plate, so as to reduce the thermal fatigue of the emitter electrodes.

Press-contact type semiconductor device

With a semiconductor device embodying this invention, a semiconductor element is clamped between a pair of electrodes in a housing. A hollow cylindrical explosion-proof member is so set in the housing as to enclose the semiconductor element. The hollow cylindrical explosion-proof element is prepared from soft elastic material capable of absorbing the force of the explosion of the semiconductor element.

Growing community of inventors

Chigasaki, Japan

Shinjiro Kojima