Sanyo Electric Co., Ltd.

Shinji Yuda

Tsutomu Yamada

Nobuhiko Oda

Shiro Nakanishi

Kiyoshi Yoneda

Koji Suzuki

A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

Thin film transistor and active matrix type display unit production methods therefor

Thin film transistor and manufacturing method of thin film transistor

Thin film transistor having a stopper layer

Growing community of inventors

Moriguchi, Japan

Shinji Yuda