Funai Electric Company Ltd.

Panasonic Corporation

Nuvoton Technology Corporation Japan

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Takeda Chemical Industries, Inc.

Yoshino Gypsum Co., Ltd.

Funai Elec. Co. Ltd.

Shinji Yoshida

Kazuhiko Yamanaka

Takumi Yamaguchi

Kunimasa Takahashi

Katsuya Samonji

Yasumasa Hironaka

Atsunori Mochida

Yuuichi Inaba

Hisanobu Tanaka

Daisuke Ueda

Isao Kidoguchi

Toru Takayama

Kazutoshi Onozawa

Osamu Maeda

Katsuhiro Morisada

Yoshikatsu Okamoto

Hiroyuki Hagino

Kenichi Matsuda

Akira Igarashi

Hironobu Shimokubo

Yasumasu Hironaka

Tsuyoshi Tanaka

Takahiko Murata

Hideyuki Nakanishi

Yoshiaki Hasegawa

Shigetaka Kasuga

Mitsuyoshi Mori

Masahiro Kasano

Kenji Orita

Yoshito Ikeda

Toshikazu Onishi

Shinichi Takigawa

Masahiko Hirata

Munekazu Iinuma

Masaharu Miyahara

Masanori Hiroki

Takuma Katayama

Itaru Yokoyama

Koji Mehara

Akinori Okazaki

Yosei Kuwazuru

Takahiro Okaguchi

Katsumi Niimi

Yuji Ataka

Hideo Kitagawa

Kazuyuki Umehara

Keiichi Ohki

Saburou Yamato

Tadashi Nakagaki

Ayaka Taniguchi

Toshinobu Tanimoto

Ichiro Takahara

Ryozo Sato

Shuichi Nakazawa

Hidetoshi Furukawa

Ryoji Hiroyama

Keishi Kouno

Noboru Inoue

A semiconductor light-emitting element includes a light emission layer including a group III nitride semiconductor; an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al; and a p-type clad layer disposed above and in contact with the electron barrier layer, wherein the electron barrier layer and the p-type clad layer contain Mg as a dopant, and the p-type clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side.

Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element

A semiconductor light-emitting device includes: a first semiconductor layer containing a first conductivity type nitride semiconductor; an active layer containing a nitride semiconductor including Ga or In; an electron barrier layer containing a nitride semiconductor including at least Al, and being of a second conductivity type; and a second semiconductor layer containing a second conductivity type nitride semiconductor. The electron barrier layer includes a region where an Al composition ratio increases monotonically toward the second semiconductor layer. A maximum impurity concentration position of the second conductivity type in the electron barrier layer is located between an interface on an active layer side of the electron barrier layer and an intermediate position between a maximum Al composition ratio position of the electron barrier layer in the region and an interface on an active layer side of the electron barrier layer.

Semiconductor light-emitting device

A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.

Semiconductor laser device

A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×10atom/cm; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×10atom/cmand at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×10atom/cm.

Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal

A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×10cm. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Nitride-based semiconductor light-emitting element and manufacturing method thereof

Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Nitride semiconductor laser element and illumination light source module

A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.

Semiconductor light emitting element

A gypsum panel includes a gypsum core containing a termiticide with poor water solubility, wherein the gypsum core has a first end region, a center region, and a second end region having an equal thickness and extending along a thickness direction from one surface side to another surface side, the termiticide is contained in each of the first end region, the center region, and the second end region, and a content of the termiticide in the center region is lower than a content of the termiticide in the first end region and in the second end region.

Gypsum panel and method for producing gypsum panel

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Nitride semiconductor light emitting device

Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.

Nitride semiconductor laser element

A nitride semiconductor light-emitting element includes a layered semiconductor body which is made of a group III nitride semiconductor, and includes a light-emitting facet, and a multilayer protective film which is formed to cover the light-emitting facet of the layered semiconductor body, and includes a plurality of insulating films. The multilayer protective film includes a first protective film and a second protective film covering the first protective film. The first protective film is a crystalline film which is made of nitride containing aluminum, and is at least partially crystallized. The second protective film is a crystalline film which is made of oxide containing aluminum, and is at least partially crystallized.

Nitride semiconductor light-emitting element

A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other.

A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.

Nitride semiconductor light-emitting system

A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Light-emitting device

Growing community of inventors

Osaka, Japan

Shinji Yoshida