Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Shinji Yashima

Atsushi Umekawa

Unryu Ogawa

Tokunobu Akao

Masahisa Okuno

Kaichiro Minami

Akinori Tanaka

Masahiro Miyake

Tadashi Terasaki

Katsunori Funaki

Masayuki Tomita

Ryuichi Shimada

Naoya Yamakado

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.

Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.

Substrate processing apparatus and method for manufacturing semiconductor device

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

Substrate processing apparatus having rotatable slot-type antenna and method of manufacturing semiconductor device using the same

A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of &#xbc; wavelength of the microwave supplied when the substrate is processed.

Substrate processing apparatus and method of manufacturing a semiconductor device

A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

A processing speed may be easily controlled over the wide range within the impedance variation range. A substrate processing apparatus includes: a processing chamber configured to process a substrate; a substrate support unit configured to support the substrate in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; a plasma generation electrode configured to convert the processing gas supplied into the processing chamber to be in a plasma state; a radio frequency power source configured to apply a radio frequency power to the plasma generation electrode; a variable impedance electrode installed at the substrate support unit and configured to control an electric potential of the substrate; a variable impedance mechanism connected to the variable impedance electrode and configured to vary an impedance according to a reciprocal of a peak-to-peak voltage of the plasma generation electrode; an exhaust unit configured to exhaust an atmosphere in the processing chamber; and a controller configured to control at least the variable impedance mechanism.

Substrate processing apparatus and method of manufacturing semiconductor device

A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.

Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride

Growing community of inventors

Toyama, Japan

Shinji Yashima