Kabushiki Kaisha Toshiba

Shinji Uya

Nozomu Harada

Nagataka Tanaka

Mamoru Iesaka

Masaki Kamimura

Tomoyasu Kudo

A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.

Solid state imaging device having a pair of charge holding films

A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion.

Solid-state imaging device including a photodiode configured to photoelectrically convert incident light

The semiconductor devices include a semiconductor substrate, a first CCD region formed at the surface of said substrate, and a second CCD region having a side connected to said first CCD. A channel region of the first CCD region has a different channel potential at a latter part of the end transfer electrode corresponding to the portion of the first CCD region connected to the second CCD region.

Semiconductor devices and method of manufacturing the same

A solid state image pickup apparatus is of a laminated type, and charge reading source layers 4 for the individual pixels, which are adjacent to buried channels 3 of vertical CCDs, are formed in such a pattern that the arrays of horizontally adjoining source layers are shifted by a 1/2 pixel pitch from one another in the vertical direction. The buried channels are formed in a zigzag pattern with a nearly constant channel width.

Growing community of inventors

Oita, Japan

Shinji Uya