Fujifilm Corporation

Fuji Photo Film Company, Limited

Other

Fugi Photo Film Co., Ltd.

Fujifilm Holdings Corporation

Shinji Uya

Eiichi Okamoto

Masanori Nagase

Shunsuke Tanaka

Yuko Nomura

Tetsuo Yamada

Yosuke Nakahashi

Toru Hachiya

Tomoki Inoue

Makoto Shizukuishi

Kazuhiro Kawajiri

Ryuji Kondo

Tatsuya Hagiwara

Tomohiro Sakamoto

Shu Takahashi

Hideki Wako

Mitsuru Iwata

Yong Gwan Kim

Yutaka Takeuchi

Katsuhiro Shibata

Jiro Matsuda

Yuko Adachi

Hiroo Umetsu

Light is illuminated from a back-surface side of a silicon substrate. A back-illuminated type imaging devicereads out, from a front-surface side of the silicon substrate, charges that are generated in the silicon substratein response to the illuminated light, so as to perform imaging. The back-illuminated type imaging deviceincludes pad portionsformed on the back surface of the semiconductor substrate, and a plurality of pillarsthat are formed in the semiconductor substrate, are made of a conductive material and electrically connect wiring portionsformed on the front surface of the semiconductor substrateand the pad portionsto each other.

Back-illuminated type imaging device and fabrication method thereof

A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.

Backside-illuminated imaging device and manufacturing method of the same

An image pickup device including a semiconductor substrate that is irradiated with light from a first surface side thereof, and reading signal charges generated in the semiconductor substrate in accordance with the light from a second surface side thereof, wherein the semiconductor substrate includes: a photoelectric converting layer that includes a plurality of impurity diffusion layers on the second surface side of the semiconductor substrate, and that produces the signal charges by photoelectric conversion; and an embedded member that includes a light blocking material, and that is embedded in an impurity diffusion layer on a surface side of the photoelectric converting layer, the surface side facing the second surface side of the semiconductor substrate.

Backside illumination image pickup device, method of producing backside illumination image pickup device, and semiconductor substrate for backside illumination image pickup device

A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.

Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device

An imaging element comprises: an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises: a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light; a charge storage part that stores the signal charge; and a reading transistor that reads the signal charge stored in the charge storage part.

Imaging element and imaging device

An imaging device is provided and includes: a photoelectric conversion layer that has a silicon crystal structure and generates signal charges upon incidence of light; a multiplication and accumulation layer that multiplies the signal charges by a phenomenon of avalanche electron multiplication; and a wiring substrate that reads the signal charges from the multiplication and accumulation layer and transmits the read signal charges. The photoelectric conversion layer includes: a first conductive impurity layer containing first impurities in an impurity concentration; an electron acceleration layer containing the first impurities in a lower impurity concentration than the first conductive impurity layer; and a second conductive impurity layer to which a voltage is applied, the second conductive impurity layer containing second impurities and disposed on a side opposite a light incidence side of the electron acceleration layer, and an insulating layer is disposed between the electron acceleration layer and the multiplication and accumulation layer.

Imaging device, method of driving imaging device, and method of manufacturing imaging device

A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of the first semiconductor substrate and are formed in a two-dimensional array on a surface side of the first semiconductor substrate; a CCD type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices; and a MOS type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices.

Back irradiating type solid state imaging device

An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.

Electronic device, method for manufacturing the same, and silicon substrate for electronic device

A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.

Solid-state imaging device, driving method thereof, and imaging apparatus

A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 &#x3bc;m or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.

Solid state image pickup device and its manufacture method

In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Gate oxide film structure for a solid state image pick-up device

A semiconductor substrate includes: a first semiconductor layer; an oxide layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the oxide layer; a first recess that is formed in the second semiconductor layer with extending from an upper face of the second semiconductor layer toward the first semiconductor layer, the first recess being formed at a position where an alignment mark for determining a forming position of an element which is to be built in the semiconductor substrate is to be formed; and an etching prevention layer that is inwardly formed from a position of an upper face of the first semiconductor layer, the position corresponding to the recess, the layer comprising a material that is prevented from being etched during etching of the first semiconductor layer.

Semiconductor substrate, semiconductor device, method of producing semiconductor substrate, and method of producing semiconductor device

A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.

Growing community of inventors

Miyagi, Japan

Shinji Uya