Canon Kabushiki Kaisha

Shinji Utamura

Hideki Ina

Nobuaki Ogushi

Ichiro Kano

Masaya Ogura

Bunei Hamasaki

Akiya Nakai

Kaoru Mizushiri

Masahiro Ohtake

Takashi Sugimori

Kazuhiro Takahashi

Yuichi Yamada

Hideki Nogawa

Fumio Sakai

Masato Aketagawa

Yasuo Hasegawa

Kazuhito Outsuka

An information providing system includes a reception unit that receives first information concerning a process to be performed by an apparatus from a customer via a network, a processing unit which simulates the process based on the first information and prepares second information based on a result of the simulation, and a transmission unit which transmits the second information to the customer via a network.

Information providing method and system

An information providing system which includes a reception unit that receives first information concerning a process to be performed by an apparatus from a customer via a network, a processing unit which simulates the process based on the first information and prepares second information based on a result of the simulation, and a transmission unit which transmits the second information to the customer via a network.

A projection exposure apparatus including a projection optical system for projecting a pattern of a reticle onto a substrate, an optical characteristic detecting device for detecting a change in optical characteristic of the projection optical system, which change may result from the projection of the reticle pattern onto the substrate through the projection optical system, and a light detecting device for detecting at least one of (i) an intensity distribution of light from the reticle pattern, at a position adjacent to the reticle or adjacent to an imaging plane on which the reticle is to be imaged, and (ii) an intensity distribution of the light from the reticle pattern, at a position adjacent to a pupil plane of the projection optical system, wherein the optical characteristic detecting device is arranged to detect the amount of change in optical characteristic in accordance with the intensity distribution detected by the light detecting device.

Projection exposure apparatus including an optical characteristic

An aligner for exposing a pattern image of an original plate by projecting the image onto an exposure surface of a substrate, which is held on a table, in a focused state through a projection optical system includes a defocusing detection device for detecting a deviation from a focusing position at each of a plurality of points within an exposure region on the surface of the substrate, which is arranged at an exposure position, a device for determining an approximate plane of the exposure surface of the substrate within the exposure region on the basis of deviation detection values detected at the plurality of points by the defocusing detection device and a decision device for determining a deviation of the approximate plane of the exposure surface of the substrate, on the basis of the deviation detection values detected at each of the plurality of points, to decide whether contamination is present between the table and the back side of the substrate. Also disclosed is a contamination detecting method applied to such an aligner.

Aligner and contamination detecting method

A projection exposure apparatus includes an illumination system for illuminating a mask pattern; a projection optical system for projecting the mask pattern being illuminated upon the surface of a wafer so as to expose the same to the mask pattern; a wavelength detecting device effective to detect the wavelength of a light from a light source included in the illumination system; and a control device operable, in accordance with an output signal from the wavelength detecting device, to control at least one of the projection magnification of the projection optical system and the relative position of the wafer with respect to the imaging position of the mask pattern.

Exposure apparatus

An alignment method usable in an apparatus for transferring images of a pattern of a mask onto different portions of a semiconductor wafer in a step-and-repeat manner, is disclosed. In this alignment method, positional deviation of at least one portion of the wafer with respect to the mask is measured and, on the basis of this measurement, the mask and the wafer are aligned with each other. After this,step-and-repeat exposure is executed. When the measurement of the positional deviation of the at least one portion of the wafer is unattainable, another portion of the wafer is selected and the deviation measurement is executed in respect to the selected portion. In another aspect of the invention, with regard to a rotational component of the deviation of the wafer, measurement and alignment are repeatedly executed until the rotational component becomes less than a predetermined value. Thereafter, the step-and-repeat exposure is initiated.

Alignment method

An improved alignment method usable in a step-and-repeat type alignment and exposure apparatus for photolighographically transferring images of a pattern of a reticle onto different shot areas on a semiconductor wafer, for manufacture of semiconductor devices. According to this method, the alignment is executed with respect to an X direction, a Y direction and a rotational direction parallel to a plane containing the X and Y directions. With regard to the rotational direction, positional deviation of the wafer as a whole with respect to the reticle is measured and corrected prior to the initiation of the step-and-repeat photoprinting. With regard to the X and Y directions, detection and correction of any deviation are executed for each of the shot areas of the wafer. By this, high-accuracy and high-speed alignment is attainable for all the shot areas of the wafer.

Growing community of inventors

Tochigi, Japan

Shinji Utamura