Taiyo Yuden Co., Ltd.

Fujitsu Corporation

Fujitsu Media Devices Limited

Ushio Denki Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Analog Devices,inc.

Fove, Inc.

Shinji Taniguchi

Tokihiro Nishihara

Tsuyoshi Yokoyama

Masanori Ueda

Takeshi Sakashita

Masafumi Iwaki

Motoaki Hara

Jun Tsutsumi

Go Endo

Taisei Irieda

Masaharu Doi

Jiansong Liu

Hiroomi Kaneko

Hiroshi Kawakami

Masaaki Ohyama

Masumi Kida

Takashi Matsuda

Yoshio Satoh

Tsutomu Miyashita

Minoru Seino

Yasuyuki Saitou

Masaki Sugiyama

Tsuyoshi Yamamoto

Tadao Nakazawa

Koji Tanimoto

Masaaki Norimatsu

Ryuji Toyama

Hisanori Ehara

Yuki Takahashi

Kazunori Inoue

Shogo Inoue

Takahiro Inoue

Tomoya Yamakawa

Toshio Nishizawa

Yoshio Sato

Hideaki Yagyu

Takafumi Mizojiri

Yasuo Ebata

Takuto Yano

Kenya Hashimoto

Ryuichi Okamura

Yumi Nakazawa, Legal Representative

Manabu Mori

Koichi Hatano

Naoki Goto

Akinobu Nakashima

Kenji Tanino

Mamoru Ishida

Yukio Ueshima

Atsushi Yuyama

Kenichi Sabatake

Mitsuhiro Habuta

Ikuo Moriwaki

Tatsuya Aoki

Masufumi Iwaki

Tadao Nakazawa, Deceased

Kyosuke Yamane

Yuji Shimizu

Satoshi Orito

A temperature measurement method comprises a step (A) of lighting a light source part to irradiate a substrate to be treated that is an object to be heated with light for heating, the light source part including a plurality of semiconductor light-emitting elements that emits light having a main emission wavelength range of 0.3 μm or more and less than 0.5 μm; a step (B) of turning off the light source part after the step (A); a step (C) of maintaining an unlit state of the light source part after the step (B); and a step (D) of measuring, during the step (C), a temperature of the substrate to be treated through observation of light emitted from the substrate to be treated using a thermometer having a sensitivity wavelength range different from the main emission wavelength range of light emitted from the light source part.

Temperature measurement method, optical heating method, and optical heating device

An acoustic wave device includes a substrate, one or more acoustic layers provided on the substrate, the one or more acoustic layers each being an air gap or an acoustic mirror, the acoustic mirror having a structure in which at least two layers having different acoustic characteristics are stacked, lower electrodes provided on the substrate, the lower electrodes sharing one acoustic layer of the one or more acoustic layers between the substrate and the lower electrodes, the lower electrodes being arranged to be separated from each other across a groove, an insulating film provided in the groove on the one acoustic layer, a piezoelectric film continuously provided on the lower electrodes and the groove, and an upper electrode continuously provided on the piezoelectric film to form resonators by sandwiching the piezoelectric film between the upper electrode and the lower electrodes.

Acoustic wave device, filter, and multiplexer

An acoustic wave device includes: a substrate; a lower electrode, an air gap being interposed between the lower electrode and the substrate; a piezoelectric film located on the lower electrode; and an upper electrode located on the piezoelectric film such that a resonance region where at least a part of the piezoelectric film is interposed between the upper electrode and the lower electrode is formed and the resonance region overlaps with the air gap in plan view, wherein a surface facing the substrate across the air gap of the lower electrode in a center region of the resonance region is positioned lower than a surface closer to the piezoelectric film of the substrate in an outside of the air gap in plan view.

An optical heating device includes: a chamber that accommodates a workpiece; a supporter that supports the workpiece in the chamber; a plurality of solid-state light sources emitting heating light toward a main surface of the workpiece; a plurality of reference light sources that emit reference light toward the main surface of the workpiece when power of the same power value is supplied to each of the reference light sources; a plurality of photodetectors that corresponds to the respective reference light sources, and that output signals in response to the intensity of the reference light that has been received; and a controller that executes a reference mode and a heating mode, the reference light sources and the corresponding photodetectors are arranged to face each other through the workpiece, and the photodetectors are configured to receive the reference light emitted from the reference light sources and transmitted through the workpiece.

Optical heating device

A ultraviolet irradiation apparatus includes: a first electrode block and a second electrode block located apart from each other in a first direction or located in an electrically-insulated state in the first direction; a recessed groove formed on a side surface of each of both the blocks; a first discharge lamp partially fitted into the recessed grooves formed in both the blocks and located across the both blocks; a power supply part for supplying electrical power to the first discharge lamp; a first current-carrying member electrically connecting the first electrode block and the power supply part; a second current-carrying member capable of electrically connecting the second electrode block and the power supply part at an electrical potential different from that of the first current-carrying member; and a light irradiation window for extracting ultraviolet light emitted from the first discharge lamp to outside.

Ultraviolet irradiation apparatus

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

Piezoelectric thin film resonator with insertion film, filter, and multiplexer

An acoustic wave device includes: a first resonator that includes a first piezoelectric substance, and first lower and upper electrodes sandwiching the first piezoelectric substance in a direction of a c-axis orientation or a polarization axis of the first piezoelectric substance; and a second resonator that is located closer to a signal input terminal than the first resonator is, is connected in series to the first resonator, includes a second piezoelectric substance, and second lower and upper electrodes sandwiching the second piezoelectric substance so that an electrode in a direction of the c-axis orientation or a polarization axis of the second piezoelectric substance has an electric potential identical to an electric potential of an electrode of the first resonator in the direction of the c-axis orientation or the polarization axis of the first piezoelectric substance, and has an antiresonant frequency less than an antiresonant frequency of the first resonator.

Acoustic wave device

A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate; lower and upper electrodes facing each other across a part of the piezoelectric film; and an insertion film located between the lower and upper electrodes, located in a part of an outer peripheral region within a resonance region where the lower and upper electrodes face each other across the piezoelectric film, and not located in a center region of the resonance region, a first width in the resonance region of the insertion film in a first region, where the upper electrode is extracted from the resonance region, being greater than a third width in the resonance region in a third region other than a second region, where the lower electrode is extracted from the resonance region, and the first region, a second width in the resonance region in a second region being the third width or greater.

Piezoelectric thin film resonator, filter, and multiplexer

An object is the provision of an optical measuring device that can be carried readily due to its reduced size and that can suppress the incidence of light other than detection light upon a light receiving unit and thus can obtain a measurement result with high accuracy. The optical measuring device includes a first light guiding path forming body having therein a first light guiding path formed by a through hole extending linearly for allowing measurement light from a light source to be incident on a measuring position in which a measurement sample is disposed, and a second light guiding path forming body having therein a second light guiding path formed by a through hole extending linearly for guiding detection light having exited from the measuring position to a light receiving unit. In the measuring position, the measurement light is incident and the detection light is exited through a sample bracket having a sample tube receiving hole into which the s sample tube loaded with the measurement sample is inserted. The second light guiding path forming body is formed from a light-absorbing material. Whole of the second light guiding path is formed surrounded by an inner wall surface of the through hole in the second light guiding path forming body. A relational expression (1) described below is satisfied when d represents a diameter of the second light guiding path of the second light guiding path forming body and L represents a length of the second light guiding path of the second light guiding path forming body.3&#x2264;&#x2264;15.&#x2003;&#x2003;Relational expression (1):

Optical measuring device

An video display system having room in a generation time of a next frame to be generated on the basis of a gaze direction of the user is provided. A video display system includes a wearable device including a reception unit that receive a video, a display unit that displays the video received by the reception unit, an irradiation unit that irradiates eyes of a user with near infrared light, and an imaging unit that images the eyes of the user viewing the video displayed on the display unit, on the basis of the near infrared light, the user wearing the wearable device and viewing the video; a gaze detection unit that detects a gaze point of the user on the basis of a captured image captured by the imaging unit; and a video generation unit that generates a video to be displayed on the wearable device on the basis of the gaze point detected by the gaze detection unit, and the wearable device includes a control unit that instructs an imaging start timing to the imaging unit so that the imaging of the imaging unit can be executed at a timing at which it is estimated that the user is viewing the frame each time each frame of the video to be displayed on the display unit is displayed.

Video display system, video display method, and video display program

An acoustic wave device includes: a substrate; an acoustic reflection layer located in or on the substrate and including an air gap, or an acoustic mirror; a piezoelectric film located on the acoustic reflection layer; lower and upper electrodes located on the acoustic reflection layer so as to sandwich the piezoelectric film so that resonance regions are located within the acoustic reflection layer and share the acoustic reflection layer, one of the lower and upper electrodes being divided, another one of the lower and upper electrodes being not divided, the lower and upper electrodes facing each other across the piezoelectric film in each of the resonance regions; and an insertion film located between the lower and upper electrodes, located in at least a part of an outer peripheral region of each of the resonance regions, and being not located in a center region of each of the resonance regions.

A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.

Ladder-type filter, piezoelectric thin film resonator, and method of fabricating the same

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face.

A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.

Piezoelectric thin film resonator and fabrication method of the same, filter, and multiplexer

An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.

Acoustic wave filter and duplexer

Growing community of inventors

Tokyo, Japan

Shinji Taniguchi