Nippon Chemical Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Oki Electric Industry Co., Ltd.

Nec Corporation

Oki Semiconductor Co., Ltd.

Shinji Tanabe

Naoaki Narishige

Kazuhiko Tsutsumi

Tatsuya Fukami

Motohisa Taguchi

Hiroshi Kobayashi

Hiroshi Shibata

Hajime Kunita

Kazuo Ochiai

Shunsuke Kikuchi

Takashi Hashimoto

Takashi Tokunaga

Takashi Taya

Yuji Kawano

Yoshiyuki Nakaki

Takayoshi Nagai

Yoshio Fujii

Takeo Saikatsu

Yukari Toide

Soichiro Okuda

Kazuo Hashima

Tuguto Maruko

Nobumasa Higemoto

Yuzo Ohdoi

Yuzou Ohdoi

Kyouichi Nishigaki

Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.

Piezoelectric material filler, composite piezoelectric material, composite piezoelectric device, composite piezoelectric material filler, and method for producing alkali niobate compound

When being blended in a toner, a barium titanate external additive for toner enhances, in particular, the toner fluidity, electrical properties, and other relevant performance; concurrently achieves high image density and reduced background fog in a printer using the toner; and further reduces image defects, such as void, fading, and the like. An industrially advantageous producing method of the barium titanate external additive for toner is also provided. The external additive for toner of the present invention includes spherical barium titanate having a specific gravity of 5.6 g/ml or less.

External additive for toner and method for producing the same

Provided is a modified perovskite type composite oxide in which the dielectric characteristics are equal to or better than those prior to modification, there is no substantial elution of coating components from the modifying coating components, and change in the specific surface areas over time and elution of the A-site metals are suppressed effectively, while the cracking traits are good. A modified perovskite type composite oxide in which the particle surface of a perovskite type composite oxide is coated with a first component of at least one selected from TiOand SiOand a second component of at least one selected from a group consisting of Al, Zr, Nd, La, Ce, Pr, and Sm, wherein the coating is formed by hydrolyzing at least one selected from a hydrolyzable TiOprecursor and a hydrolyzable SiOprecursor as a source of the first component and a salt of at least one selected from a group consisting of Al, Zr, Nd, La, Ce, Pr, and Sm as a source of the second component, and then calcining them.

Modified perovskite type composite oxide, method for preparing the same, and composite dielectric material

It is an object of the present invention to provide: a modified perovskite-type composite oxide, which effectively suppresses elution of A-site metals from a perovskite-type composite oxide, and which can be particularly preferably used as an inorganic filler for a composite dielectric body; a method for producing the same; and a composite dielectric material using the same. The modified perovskite-type composite oxide of the present invention is produced by primarily coating the particle surface of a perovskite-type composite oxide with silica and then secondarily coating it with a coupling agent, characterized in that the layer primarily coated with silica is produced by performing a heat treatment at 800&#xb0; C. to 1200&#xb0; C. on hydrolyzed silica obtained by the hydrolysis of tetraalkoxysilane.

Modified perovskite complex oxide, method for producing the same and composite dielectric material

When being blended particularly in a color toner, a barium titanate external additive for toner enhances the toner fluidity, electrical properties, and other relevant performance; concurrently achieves high image density and reduced background fog in a color printer using the toner; and further retains high image quality even under a high-temperature high-humidity environment and a low-temperature low-humidity environment. An industrially advantageous producing method of the barium titanate external additive for toner is also provided. The external additive for toner of the present invention includes spherical barium titanate having undergone coating treatment with a hydrophobicizing agent.

A dielectric ceramic-forming composition capable of being sintered at a temperature lower than that in the known art and to be formed into a dielectric ceramic material having a high dielectric constant; and a dielectric ceramic material obtained from the dielectric ceramic-forming composition are provided. The dielectric ceramic-forming composition includes a perovskite (ABO) ceramic material powder having an average particle size of 0.01 to 0.5 &#x3bc;m and a glass powder having an average particle size of 0.1 to 5 &#x3bc;m, wherein the content of the glass powder is 3 to 12 percent by weight. The perovskite (ABO) ceramic material powder is preferably a perovskite (ABO) ceramic material powder prepared by a wet reaction.

Dielectric ceramic-forming composition

An analog semiconductor integrated circuit has an analog circuit, a PMOS and a bias adjustment circuit. The gate of the PMOS is the output section of an open drain system, and is connected to an internal node on the output side of the analog circuit. The bias adjustment circuit is connected to the internal node, and allows adjustment of the bias current in accordance with the fuse disconnection number. The relationship between the voltage when a fixed current flows to an input terminal and the fuse disconnection number that allows the optimum bias current to flow to the output section of the analog LSI is checked by using a plurality of sample analog LSIs having different threshold voltages. The voltage is measured by causing a fixed current to flow to the input terminal of a non-sample analog LSI, and the fuse disconnection number corresponding with this voltage is obtained. Thus, the fuses in the bias adjustment circuit are disconnected.

Analog semiconductor integrated circuit and method of adjusting same

The semiconductor device includes a multilevel interconnection formed on a semiconductor substrate. The multilevel interconnection includes a plurality of wiring layers each of which is insulated by an insulating layer. A metal member is formed as a shielding film in a same plane as a wiring layer. As a result, the shielding layer can be formed without increasing the number of process steps.

Semiconductor device having a shielding layer

A communication equipment includes short-circuited stubs electrically connecting signal through holes to ground through holes, respectively. Thus, it reduces signal reflection even if the transmission speed of a signal is increased.

Signal repeating device

Quantizers included in an analog-to-digital converter each compare an input analog voltage with a reference voltage to convert the analog voltage to digital data and output a voltage representative of a difference between the analog voltage and a voltage corresponding to the digital data. In each quantizer includes a comparator comparing the analog voltage with the reference voltage to output a result of comparison. An amplifier amplifies a voltage representative of a difference of the analog voltage from the reference voltage. Another amplifier inverts the voltage representative of the difference of the analog voltage from the reference voltage and amplifies the inverted voltage. A couple of switches are respectively connected to the one and the other amplifier for selecting either one of the output voltages of the amplifiers in accordance with the result of comparison. An exclusive-NOR gate develops the digital data in accordance with the result of comparison and digital data output from the preceding-stage quantizer.

Analog-to-digital converter including a series of quantizers interconnected in cascade

A method of manufacturing a semiconductor device in which potential can be applied well to a substrate without the semiconductor device being made less compact. A wafer A includes a semiconductor layer a surface oxide film and electrode pads for the substrate. The semiconductor layer is formed on the wafer A via an insulating layer and a plurality of same semiconductor circuits are formed collectively at the semiconductor layer The surface oxide film covers the semiconductor layer The electrode pads for the substrate are formed on the surface oxide film in correspondence with the semiconductor circuits. Cut grooves for separating the wafer A into chips of the semiconductor circuits are formed in the wafer A from the surface oxide film to the substrate. Before the wafer A is separated into the chips a conductive layer is formed. The conductive layer is formed from a substrate region of cut groove surfaces and via the cut groove surfaces and and reaches the electrode pads

Semiconductor device and method of manufacturing the same

A 3-electrode, surface-discharge type plasma display is capable of offsetting a radiation fields which is generated at the time of displaying, to reduce radiation noises. To drive the plasma display, an X-electrode and a Y-electrode are separated to an even number (2m) and an odd number (2m-1), respectively. During a resetting period and an addressing period, pulse voltage is applied to the even-numbered and odd-numbered electrodes at the same time, whereas in a sustained discharge period, the phase of the pulse voltage applied to the even-numbered electrode is delayed by 180 degrees from that applied to the odd-numbered electrode.

Plasma display

An oscillating apparatus includes a quartz crystal oscillator for outputting a reference frequency signal; a phase-locked loop for oscillating a desired frequency signal on the basis of an output from the quartz crystal oscillator, a unit for detecting vibration components added to the quartz crystal oscillator, a unit for variably controlling phases and levels of the detected vibration components, a unit for obtaining a correlation value between the detected vibration components and vibration components in the phase-locked loop to variably control the phases and the levels, and a unit for controlling the phase-locked loop on the basis of the phases and levels of the vibration components which are variably controlled.

Oscillating apparatus having variably controlled vibration cancellation

An oscillating apparatus includes a quartz crystal oscillator for outputting a reference frequency signal, a phase-locked loop for oscillating a desired frequency signal on the basis of an output from the quartz crystal oscillator, a unit for detecting vibration components added to the quartz crystal oscillator, a unit for variably controlling phases and levels of the detected vibration components, a unit for obtaining a correlation value between the detected vibration components and vibration components in the phase-locked loop to variably control the phases and the levels, and a unit for controlling the phase-locked loop on the basis of the phases and levels of the vibration components which are variably controlled.

Growing community of inventors

Tokyo, Japan

Shinji Tanabe