Hitachi Chemical Company, Ltd.

Other

Renesas Electronics Corporation

Hitachi Chemical Research Center, Inc.

Shinji Takeda

Yasuo Miyadera

Masami Yusa

Takashi Masuko

Akira Kageyama

Iwao Maekawa

Aizou Kaneda

Tooru Kikuchi

Mitsuo Yamasaki

Osamu Hirai

Noriyuki Taguchi

Kazumi Kokaji

Mitsuo Yamazaki

Makoto Saitou

Akio Kotato

Tadaji Satou

Mituo Yamasaki

Yuusuke Miyamae

Naoki Asano

Koji Hirano

Yongxian Wu

Kakeru Kimura

Iwao Fukuchi

Shoichi Hamada

Sachiko Kawaguchi

Yoshihiro Shimizu

Takuro Ichikawa

Bun-ichiro Nakajima

Masahito Kajiwara

Anthony H Tsai

An ultrasonic receiver receives ultrasonic waves reflected at a plurality of portions of the body of a person to be measured, and thus the person to be measured needs to input the approximate height of himself/herself. An electrostatic capacitance sensor includes a transmission electrode and a reception electrode. The electrostatic capacitance sensor measures a mutual capacitance between the transmission electrode and the reception electrode by a mutual capacitance method. A variable frequency pulse generator generates a pulse supplied to the transmission electrode. A control apparatus allows the variable frequency pulse generator to sweep the frequency of the pulse and allows the electrostatic capacitance sensor to measure the mutual capacitance to identify a frequency at which the measured mutual capacitance is minimized. The control apparatus obtains the height of a person to be measured on the basis of the identified frequency.

Height measuring apparatus, health care device, and rotary gate

An ionic polymer composite device and methods for fabricating the ionic polymer composite device are provided. The ionic polymer composite device includes two extended electrode layers, each extended electrode layer including at least one ionic polymer with a plurality of electrically conductive particles, and a dielectric layer including at least one sulfonated poly ether sulfone polymer or a derivative between the two extended electrode layers.

Ionic polymer devices and methods of fabricating the same

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250&#xb0; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Semiconductor device and process for fabrication thereof

Production of hollow carbon fibers and hollow carbon particles includes baking and carbonization of polymer particles having a specified volume after deformation. A metal-deposited carbon fiber with metal deposited inside and/or outside the hollow carbon fiber is applicable to electron discharge devices. The thickness and crystallinity of the graphite layer can be freely controlled. Since almost no by-product is generated, separation and refining using a solvent is not required. A hollow carbon particle of desired shape can be produced at a high yield rate. The hollow carbon fiber represented by a carbon nano-tube can be controlled in such a way that a low resistance and uniform shape are provided so that there is an increase in the amount of electrons discharged from the hollow carbon fiber. Use of this hollow carbon fiber as an electron discharge source provides an excellent electron discharge device characterized by stable pixels.

Hollow carbon fiber and production method

Laminating method of film-shaped organic die-bonding material, die-bonding method, laminating machine and die-bonding apparatus, semiconductor device, and fabrication process of semiconductor device

A microcomputer includes reloadable registers for prestoring count values corresponding to an ineffective interval and an effective interval which are set in accordance with the timing of a first edge and a second edge of a head pulse signal, and for setting these count values sequentially into a counter. Only when the first edge and second edge are input at predetermined timing through an event input terminal, that is, only when the head pulse signal is input, the interrupt signal is generated for changing the operation mode from a low current consumption mode to a normal operation mode. This makes it possible to prevent a mode transition due to noise, and reduce the power consumption of the microcomputer by making more effective use of the low current consumption mode by improving a mode transition identification rate.

Microcomputer capable of switching between low current consumption mode and normal operation mode

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 Mpa or less at a temperature of 259&deg; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Laminating method of film-shaped organic die-bonding material,

Growing community of inventors

Tsukuba, Japan

Shinji Takeda