Fuji Electric Co., Ltd.

Fuji Electric Fa Components & Systems Co., Ltd.

Shinji Tada

Eiji Mochizuki

Tatsuo Nishizawa

Yoshinari Ikeda

Mitsuo Yamashita

Yoshito Kinoshita

Kunio Shiokawa

Ryoichi Kato

Yoshitaka Nishimura

Yuma Murata

Hiromichi Gohara

Hideyo Nakamura

Fumihiko Momose

Masafumi Horio

Kohei Yamauchi

Seiji Imamura

Kazumasa Kido

Mamoru Akimoto

Yuuichi Yamamoto

Toshiya Shibayanagi

Takashi Saitou

Kyouhei Fukuda

A semiconductor module includes a first case having a first side face, a first insulating paper disposed on the first case and having a first width in a first direction and having a notch with a second width smaller than the first width, a first terminal between the first case and the first insulating paper, having an exposed portion exposed from the first insulating paper at an area where the notch is formed, and a second terminal on the first insulating paper at a side opposite to a side where the first terminal is disposed. The first terminal and the first insulating paper have extended portions extending to an outside of the first case from the first side face so that a portion of the first insulating paper where the notch is formed and the exposed portion of the first terminal are located at the outside of the first case.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device, including a capacitor, a semiconductor module having a first power terminal formed on a front surface of a first insulating member, and a connecting member electrically connecting and mechanically coupling the semiconductor module and the capacitor to each other, the connecting member having a front surface and a rear surface opposite to each other, the rear surface being on a front surface of the first power terminal. The connecting member is bonded to the semiconductor module via a first welded portion, which penetrates the front and rear surfaces of the connecting member, and penetrates the front surface of the first power terminal, in a thickness direction of the semiconductor device, a distance in the thickness direction between a bottommost portion of first welded portion and the front surface of the first insulating member being 0.3 mm or more.

Semiconductor device with a laser-connected terminal

The semiconductor device includes a first insulating circuit substrate; a semiconductor chip including a plurality of control electrodes, disposed on the first insulating circuit substrate; a second insulating circuit substrate including a plurality of first through-holes in which conductive members are arranged on inner walls and/or an outer periphery of ends of the first through-holes, the second insulating circuit substrate being disposed above the semiconductor chips; and first pins inserted into the first through-holes and having at one end a columnar part connected to the control electrodes of the semiconductor chips, and having at another end a head part that is wider than an inner diameter of the first through-holes.

Semiconductor device

A solder joint layer has a structure in which plural fine-grained second crystal sections () precipitate at crystal grain boundaries between first crystal sections () dispersed in a matrix. The first crystal sections () are Sn crystal grains containing tin and antimony in a predetermined proportion. The second crystal sections () are made up of a first portion containing a predetermined proportion of Ag atoms with respect to Sn atoms, or a second portion containing a predetermined proportion of Cu atoms with respect to Sn atoms, or both. The solder joint layer may have third crystal sections () which are crystal grains that contain a predetermined proportion of Sb atoms with respect to Sn atoms. As a result, solder joining is enabled at a low melting point, and a highly reliable solder joint layer having a substantially uniform metal structure can be formed.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth Lof each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Semiconductor device and method for manufacturing the semiconductor device

A thermocompression bonding structure includes a first member and a second member having a linear expansion coefficient different from that of the first member; and metal fine particles interposed between the first and second members as a bonding material to thermocompression bond the two members. The two members are disposed to apply thermal stress generating between the first member and the second member as pressurizing force on a bonding surface between the two members, and to increase temperature to thermocompression bond the first member and the second member.

Thermocompression bonding structure and thermocompression bonding method

A semiconductor device composed of a plurality of semiconductor modules exhibiting a large current carrying capacity for a semiconductor device as a whole is disclosed. The connection between the plurality of semiconductor modules is conducted by means of optimum construction suited to the semiconductor device. The device comprises a semiconductor module having externally connecting terminals protruding out of a casing, bus bars electrically connecting the specific externally connecting terminals of the plurality of semiconductor modules arranged in parallel with each other, and a semiconductor module case covering and fastening the plurality of semiconductor modules connected with the bus bars. The bus bars and the externally connecting terminals of the semiconductor modules are joined by means of laser welding.

A manufacturing method of an electric contact and manufacturing equipment of the electric contact. A contact and a metal base are superimposed and support by a jig, and a rotational tool, which rotates at a predetermined speed and advances/retracts to/from the jig, is pressed into a surface, which is not contacted with the contact, of the metal base while being rotated, so that the contact and the metal base are joined by solid state diffusion welding by using frictional heat generated by friction between the rotational tool and the metal base, and then the rotational tool is retracted from the metal base.

Manufacturing method of electric contact and manufacturing equipment of electric contact

A novel lead-free Sn&mdash;Bi based alloy having an improved wettability in comparison to conventional Sn&mdash;Bi based alloys, a melting point lower than 221&deg; C., the eutectic point of an Sn&mdash;Ag alloy, and proper bonding and heat-resistant properties is provided. This alloy is an Sn&mdash;Bi based alloy containing tin as a major component, and 21 wt.% or less bismuth, 4 wt.% or less silver, 2 wt.% or less copper (inclusive of zero), and 0.2 wt.% or less nickel.

Solder alloy

A solder alloy which is lead free, consists essentially of, in weight %: Sn; 0<Ag&lE;4.0; 0<Cu&lE;2.0; 0<Ni&lE;1.0; and 0<Ge&lE;1.0, wherein addition of Ni and Ge to the solder alloy enhances wettability and tensile strength, and prevents formation of an oxide film. Additionally, a solder alloy which is lead free, consists essentially of, in weight %: Sn; 0<Sb&lE;3.5; 0&lE;Ag &lE;4.0; 0<Ge&lE;1.0; and at least one first additive selected from the group consisting of (a) 0<Ni&lE;1.0 and (b) a combination of 0<Ni&lE;1.0 and 0<Cu&lE;1.0; wherein addition of Ni and Ge to the solder alloy enhances wettability and tensile strength, and prevents formation of an oxide film.

Solder alloys

Lead-free alloys of the present invention includes bismuth in the amount of 30 to 58% by weight and one of the following first to fourth compositions in addition to tin as a main component. In the first composition, germanium is present in the amount of 0.1 or less % by weight. In the second composition, silver is present in the amount of 5% by weight or less and antimony is present in the amount of 5% by weight or less in addition to 0.1% by weight or less of germanium of silver. In the third composition, nickel and copper are included, preferably 0.2 or less % by weight or less of nickel and 1% by weight of copper. In the fourth composition, at least one selected from the group of 5 or less % by weight of silver, 5 or less % by weight of antimony, and 0.1 or less % by weight of germanium in addition to 0.2 or less % by weight of nickel and 1 or less % by weight of copper. Accordingly, the solder alloys of the present invention can be provided as lead-free and low-fusing solder alloys having good ductility, heat resistance, and wettability, compared with the conventional one.

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Hino, Japan

Shinji Tada