Hitachi, Ltd.

Hirose Electric Company, Ltd.

Plants Laboratory Inc.

The University of Tokyo

Okuma Corporation

Kohjin Co., Ltd.

Hiatchi, Ltd.

Konica Minolta, Inc.

Shinji Shimizu

Makoto Takahashi

Isamu Asano

Masakazu Sagawa

Yoshitaka Tadaki

Atsushi Hiraiwa

Toshihiro Sekiguchi

Jun Murata

Mitsuaki Horiuchi

Jun Sugiura

Hidetsugu Ogishi

Hiroko Kaneko

Masami Ozawa

Yasunobu Kosa

Tokuo Kure

Katsuhiro Shimohigashi

Yoshio Sakai

Kazuhiro Komori

Toshiaki Masuhara

Osamu Minato

Yoshifumi Kawamoto

Hideo Sunami

Masanobu Miyao

June Sugiura

Mitsumasa Koyanagi

Osamu Tsuchiya

Katsuyuki Sato

Kotaro Nishimura

Tokumasa Yasui

Atsuyuki Yukawa

Hiroyuki Miyazawa

Masahiro Tanaka

Makoto Homma

Ken Uchida

Seiichi Iwamatsu

Masayuki Okabe

Yoshio Torizawa

Masahiro Yanagida

Saneyuki Kawabata

Makio Tominaga

Makoto Ichiki

Akihito Sekiguchi

An environment control house () which can have improved strength by employing a multifaceted structure. The environment controlled greenhouse () comprises: a main body portion () and a pair of wall portions (), wherein the main body portion () comprises: a top surface portion () formed into a rectangular shape and disposed at the topmost portion; a pair of rectangular upper skirt surface portions () connectedly installed to respective edges in the transverse direction of the top surface portion (); and a pair of rectangular lower skirt surface portions () connectedly installed to an edge in the installation direction of the respective upper skirt surface portions () and disposed in a sloped manner with respect to an installation surface (L).

Environment controlled greenhouse

A greenhouse framework () is assembled out of a framework material () such as typical pipes and the like, and the outer periphery of the greenhouse framework () is covered by a sheet outer surface member () formed from a plastic sheet; a sheet inner surface member () is formed on the inner side of the greenhouse framework () in a manner of being spaced by intervals to a certain extent from the sheet outer surface member () by using a heat shield sheet such that all of a floor surface (), a wall surface (), and a ceiling surface () are substantially in a sealed state; and an air conditioning device () is installed. Thus, a desirable thermal insulation property is achieved between the inside of the greenhouse and the outside of the greenhouse, and air conditioning can be implemented with high energy efficiency. In other words, a greenhouse for plant cultivation that has a simple configuration and can be air conditioned with high energy efficiency can be provided.

Greenhouse for plant cultivation

An electrical connector connects to a mating connector in a first direction. The electrical connector includes a housing, a plurality of terminals, a terminal arrangement board made of an electrical insulator for aligning and holding the terminals, and a metal plate attached to the housing at a position facing both surfaces of the terminal arrangement board for connecting to the mating connector. The metal plate has a lock portion at a position facing one surface of the terminal arrangement board. The lock portion engages a latch portion of the mating connector in the first direction when the electrical connector is connected to the mating connector. The metal plate has an elastic pressing portion at a position facing the other surface of the terminal arrangement board. The elastic pressing portion presses the mating connector in a second direction perpendicular to the first direction when the electrical connector is connected to the mating connector.

Shielded locking electrical connector

An electrical connector includes a plurality of terminals () having contact sections () extending in the plugging direction and arranged in the arranging sections at a predetermined intervals for contact with the contact sections (A) of a mating connector (). The arranging section is made in the inside surface of a single wall of the housing.

Electrical connector

An electrical connector () comprises an insulating housing (), a plurality of contact elements () provided in a widthwise direction of the insulating housing, at least one guide portion) provided at a position where no contact element is present and guiding the connector to a position for plugging with a mating electrical connector (), and a lock portion () provided at a top of the guide portion. The lock portion has a shape of a substantially sphere or a shape of a polyhedron having a top view of a substantially circle and locks a plugging condition between the electrical connectors.

A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.

Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring

An easily adhesive polyamide film has been created from unstretched or uniaxially stretched non-heated polyamide film coated with a water-base coating mixture, whose main constituents are (A) water polyurethane resin containing acetylene glycol in which each carbon atom immediately adjacent to the triple-bonded carbon atom is replaced with a hydroxyl group and a methyl group, and/or an ethylene oxide addition product of the acetylene glycol; (B) a water-soluble polyepoxy compound; and (C) particles with an average diameter between 0.001 and 1.0 &mgr;m, of which the solid-content weight ratio is 98-30/2-70/0.1-10, the coating amount after stretching is between 0.005 and 0.030 g/m , and the film is stretched in at least one direction and then heated. This newly invented film possesses good blocking resistance and excellent adhesiveness with print ink, laminate, and other coating mixtures, and is especially suitable for boiling sterilization, retort sterilization, and packaging of liquids.

Easily adhesive polyamide film

A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. In a fifth aspect, the capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. In sixth and seventh aspects, wiring is provided.

Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring

A circuit board electrical connector for a circuit board having an attachment opening, which comprises a housing; an attachment leg having a metallic surface and projecting downwardly from the housing into the attachment opening; and a solder retention area in the attachment leg so that solder flows into an upper portion of the attaching opening.

Circuit board electrical connector

A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. In a first aspect, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In other aspects, a Y-select signal line overlaps the lower electrode layer of the capacitor element; a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region; the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it, the capacitor dielectric film being a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure; an aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; and a refractory metal, or a refractory metal silicide, is used as the protective layer for an aluminum wiring containing an added element (e.g., Cu) to prevent migration.

Method of producing semiconductor integrated circuit device having

Semiconductor integrated circuit device having switching MISFET and

A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. The impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. The Y-select signal line overlaps the lower electrode layer of the capacitor element. A potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. The dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. The capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. An aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; and a refractory metal, or a refractory metal silicide QSi.sub.x, where Q is a refractory metal and x is between 0 and 2, is used as a protective layer, for an aluminum wiring containing an added element (e.g., Cu) to prevent migration.

A semiconductor memory device is provided which has a plurality of memory cells each including a pair of cross-coupled metal insulated gate field effect transistors having channels of N-conductivity type, and a pair of load resistors of polycrystalline silicon respectively coupled to the pair of cross-coupled transistors. A peripheral circuit is also provided which is constituted by metal insulated gate field effect transistors having channels of the N-conductivity type and metal insulated gate field effect transistors having channels of P-conductivity type. The semiconductor memory device is formed in an N-type semiconductor substrate, and the pair of cross-coupled metal insulated gate field effect transistors of the memory cells are formed in a well region of P-type which forms a PN-junction with the semiconductor substrate to help reduce the susceptibility to soft errors.

Semiconductor memory having a polycrystalline silicon load resistor and

There is provided an apparatus for predicting a tool life which reports a tool life ratio to an operator or a control device, when a remarkable change of work load values is detected. In a predicted life setting section 122, there is set a percentage of a quantity worked until the detection of the noticeable change of the work load values based on the workable quantity until the breakage of the tool which is regarded as 100%. A predicted residual work quantity calculating section 123 calculates a residual tool life value converted into a parameter at a point of time when an alarm is input from a work load monitoring section 121, on the basis of data of a work quantity accumulating section 120 and the predicted life setting section 122. A predicted residual work quantity outputting section 124 reports the residual tool life value to an operator or a control device. In consequence, when the remarkable change of the work load values has been detected, a ratio of the residual work quantity to the tool life can be reported to the operator or the control device.

Apparatus for predicting tool life

Growing community of inventors

Tokyo, Japan

Shinji Shimizu