Nikon Corporation

Kabushiki Kaisha Toshiba

Micron Technology Incorporated

Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Nippon Paper Industries Co., Ltd.

Toray Industries, Inc.

Mitsubishi Electric Corporation

National Institute of Radiological Sciences

Seiko Kabushiki Kaisha

Nec Corporation

Ricoh Company, Ltd.

Tokyo Medical and Dental University

Asahi Organic Chemicals Industry Co., Ltd.

Keio University

Shinji Sato

Shunko Magoshi

Takeshi Nakatani

Koji Kimura

Katsuya Okumura

Shuji Tanaka

Kazuyoshi Sugihara

Akaru Usui

Hiromi Niiyama

Avinash Rajagiri

Hironobu Maeda

Takeshi Nakayama

Junichi Abe

Masamitsu Itoh

Atsushi Ando

Hisao Tanaka

Tetsuro Nakasugi

Masanobu Saito

Masahiro Arioka

Kenichi Koyama

Foroozan Sarah Koushan

Takuji Furukawa

Yumi Watanabe

Toru Shibata

Naoaki Inoue

Yasushi Iseki

Kouji Noda

Katsushi Hanawa

Tomoko Tanabe

Taku Inaniwa

Satoshi Matsuba

Ronit Roneel Prakash

Satoshi Takaichi

Jiun-Horng Lai

Nobukazu Kakutani

Hidekazu Kunieda

Chengkuan Yin

Kenyo Odanaka

Hideki Kojima

Yosimitu Kato

Yingda Dong

Soichi Inoue

Ching-Huang Lu

Toru Sasaki

Tsuneo Ogura

Takeshi Fujii

Tetsuya Matsuda

Koichi Yamashita

Sukchan Kim

Masashi Yoshida

Takao Tsurimoto

Shigenori Kawabata

Yoshihiro Minami

Hirofumi Tanaka

Yoshio Hirose

Yoshihide Kinbara

Masaaki Umehara

Masato Yamaguchi

Nobuyuki Tanaka

Shigeru Hasegawa

Takeo Kojima

Yasushi Sawamura

Taishi Watanabe

Tetsuya Nakanishi

Kihei Nakajima

Gensuke Goto

Kosaku Ichikawa

Takeshi Sasaki

Hitoshi Matsumura

Michio Shimura

Chihiro Tsukishima

Akihiko Maruyama

Yuki Miyano

Tateo Koyama

Kazunao Maeda

Nobutake Matsumura

Masataka Kuwana

Kaori Yamabe

Hiroshi Takenaka

Rieko Yamamoto

Shigeki Kawahara

Ryuichi Kamei

Kenyou Odanaka

Aman Gupta

Yoshiaki Takamoto

Kyoko Motoike

Yoshiyuki Kiriyama

Hirokazu Miyagawa

Keiichi Maeshima

Yuki Mitani

Ataru Kumagai

Kyouko Fukumura

Fumiko Iwahori

Takahiro Kato

Kouji Kobayashi

Nobutaka Matsumura

Takashi Fujita

A memory device can include a memory array coupled with a control logic. The control logic initiates a program operation on the memory array, the program operation including a program phase and a program recovery phase. The control logic causes a program voltage to be applied to a selected word line during the program phase. The control logic causes a select gate drain coupled with a string of memory cells to deactivate during the program recovery phase after applying the program voltage, where the string of memory cells include a plurality of memory cells each coupled to a corresponding word line of a plurality of wordlines. The control logic causes a voltage to be applied to a select gate source coupled with the string of memory cells to activate the select gate source during the program recovery phase concurrent to causing the select gate drain to deactivate.

Fast program recovery with reduced programing disturbance in a memory device

A processing system, which processes an object by irradiating the object with a processing light through an irradiation optical system, includes: an irradiation apparatus including at least a terminal optical element of the irradiation optical system; a movement apparatus that moves the irradiation apparatus; a first measurement apparatus that is disposed at the irradiation apparatus and measures a position of the object; a second measurement apparatus that measures the position of the object through at least the terminal optical element; and a third measurement apparatus that emits, from a position which is away from the irradiation apparatus, a measurement light toward the irradiation apparatus and measures the position of the irradiation apparatus by detecting the measurement light.

Processing system

A position measurement device includes a position measurement unit configured to irradiate measurement light to a reflective element, receive reflected light reflected by the reflective element, and acquire position information of the reflective element in a three-dimensional space and a reference position measurement unit configured to irradiate reference measurement light to at least one reference reflective element, receive reference reflected light reflected by the reference reflective element, and acquire position information of the reference reflective element in a three-dimensional space. The position information of the reflective element acquired by the position measurement unit is corrected using the position information of the reference reflective element measured by the reference position measurement unit.

Position measurement device and position measurement method

A blade is used in fluid and includes: a base member; and a coat layer that is formed on the base member, a plurality of first grooves and a plurality of second grooves are formed on a surface of the coat layer, a pitch of the plurality of first grooves is different from a pitch of the plurality of second grooves.

Blade, processing system and processing method

Dry solids of anionically modified cellulose nanofibers with good redispersion are provided by incorporating 5 to 300% by mass of a water-soluble polymer relative to the anionically modified cellulose nanofibers during the preparation of the dry solids of anionically modified cellulose nanofibers.

Dry solids of anionically modified cellulose nanofibers and processes for preparing them

A memory device includes a memory array including a plurality of wordline groups, each wordline group of the plurality of wordline groups including a set of even wordlines and a set of odd wordlines, and control logic, operatively coupled with the memory array, to perform operations including identifying a set of failing wordline groups from the plurality of wordline groups, the set of failing wordline groups including at least one failing wordline group determined to have failed a first erase verify of an erase verify process, and causing a second erase verify of the erase verify process to be performed sequentially with respect to each failing wordline group of the set of failing wordline groups.

Sequential wordline erase verify schemes

A variety of applications can include memory devices designed to provide stabilization of selector devices in a memory array of the memory device. A selector stabilizer pulse can be applied to a selector device of a string of the memory array and to a memory cell of multiple memory cells of the string with the memory cell being adjacent to the selector device in the string. The selector stabilizer pulse can be applied directly following an erase operation to the string to stabilize the threshold voltage of the selector device. The selector stabilizer pulse can be applied as part of the erase algorithm of the memory device. Additional devices, systems, and methods are discussed.

Stabilization of selector devices in a memory array

A nerve stimulating apparatus includes a plurality of stimulating units configured to respectively apply stimuli to a plurality of nerve regions branching from a particular nerve region of a living body, and a stimulation timing controller configured to set generating timings of respectively generating the stimuli at the plurality of stimulating units. The stimulation timing controller sets the generating timings of generating the stimuli at the plurality of stimulating units based on response results of the particular nerve region, the response results being obtained in response to the stimuli that are respectively generated at the plurality of stimulating units and that are respectively applied to the plurality of nerve regions, and the response results being measured by a biometric information measuring apparatus that measures biometric information.

Nerve stimulating apparatus, biometric information measuring system, and method of setting stimulus generating timings of biometric information measuring system

Control logic in a memory device initiates an erase operation on a memory array and causes an erase voltage signal to be applied to a source terminal of a string of memory cells in a data block of the memory array during the erase operation. The control logic further causes a first voltage signal to be applied to a first select line of the data block and a second voltage signal to be applied to a second select line of the data block, wherein the first select line is coupled to a first device in the string of memory cells and the second select line is coupled to a second device in the string of memory cells, and wherein the first voltage signal and the second voltage signal both have a common first voltage offset with respect to the erase voltage signal during a first stage of the erase operation. The control logic further determines an end of the first stage of the erase operation and causes the first voltage signal to decrease to a second voltage offset with respect to the erase voltage signal and causes the second voltage signal to decrease to a third voltage offset with respect to the erase voltage signal during a second stage of the erase operation, wherein the second offset is greater than the third offset.

Multi-stage erase operation for a memory device

A system includes a memory device including a memory array including a plurality of wordline groups and control logic, operatively coupled with the memory array, to perform operation including causing a first erase verify to be performed sequentially with respect to each wordline group of the plurality of wordline groups, identifying a set of failing wordline groups determined to have failed the first erase verify, and causing a second erase verify to be performed sequentially with respect to each wordline group of the set of failing wordline groups.

Memory device and method with stabilization of selector devices in strings in a memory array of the memory device

A plastic optical fiber for a medical device lighting decreases the cost of a lens and simplify the design of a lighting apparatus, wherein the plastic optical fiber for a medical device includes a core composed of a (co)polymer containing methyl methacrylate as a main component and is characterized by including a cladding material composed of a copolymer having a fluorine weight composition ratio of 60 to 74%, and by having a theoretical numerical aperture, NA, of 0.48 to 0.65 and, thus, the plastic optical fiber has a high numerical aperture and also has excellent translucency and flexibility.

Plastic optical fiber for medical device lighting and medical device lighting using same

A plastic optical fiber is excellent in translucency, heat resistance, resistance to environment and the like, and has highly excellent flexibility. The plastic optical fiber contains a core and at least one layer of cladding, wherein the bending elastic modulus of the innermost layer of the cladding is 20 to 70 MPa, the glass transition temperature of the innermost layer of the cladding is 10&#xb0; C. or lower, and the storage elastic modulus of the innermost layer of the cladding at 30&#xb0; C. is 1&#xd7;10Pa to 4&#xd7;10Pa.

Plastic optical fiber and plastic optical fiber cord

Growing community of inventors

Tokyo, Japan

Shinji Sato