Shin-Etsu Handotai Co., Ltd.

Shinji Orimo

Masato Yamada

Takao Takenaka

Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

Method of manufacturing a light-emitting semiconductor device substrate

In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer of mixed crystal Ga.sub.1-z Al.sub.z AS, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.

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Annaka, Japan

Shinji Orimo