Kabushiki Kaisha Toshiba

Shinji Oosawa

Hidenori Shibata

Mamoru Iesaka

Tetsunori Wada

A solid state image sensor includes a plurality of charge storage elements arranged in a matrix form on a semiconductor substrate, vertical CCDs arranged in a plurality of columns along the arrangement of the charge storage elements on the semiconductor substrate, for reading out signal charges stored in the charge storage elements, and a plurality of horizontal CCDs arranged in parallel on the substrate and extending in a direction perpendicular to the vertical CCDs, for individually transferring signal charges of each row supplied from the vertical CCDs in a horizontal direction. A channel through which the signal charge passes at the time of transfer of the signal charge between the horizontal CCDs is made wider on the signal charge output port side than on the signal charge input port side.

Solid state image sensor

A method of generating a discretization grid for a finite-difference simulation capable of simulating an object with a complex cross-sectional configuration accurately is disclosed. The method includes the step of generating grid through each vertex of the polygonal figure representing the cross-sectional configuration, and the step of generating additional grid through each intersection of the grid and the segments of the polygonal figure not parallel to the grid.

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Tokyo, Japan

Shinji Oosawa