Oki Electric Industry Co., Ltd.

Nec Corporation

Elpida Memory, Inc.

Nippon Filcon Co., Limited

Shinji Ohara

Hirokazu Komatsu

Ryousuke Kojima

Hitoshi Mitani

Hidetaka Natsume

Kei Iwatsuki

Nolifumi Sato

Takehito Kuji

Masashi Kashiwabuchi

Takami Hiruma

Yoshiyuki Tosaka

Yasuaki Matsui

Provided is a money processing device whereby it is possible to alleviate a deterioration in security when a storage unit is extracted. A money processing device comprises: a deposit/withdrawal part which is disposed upon one end side of a device main body in the longitudinal direction which faces a customer, and whereby money is either deposited or withdrawn; and storage units which are disposed to be removable with respect to the device main body and which store money. The storage units are extracted from the device main body at a location which is removed from the customer. The storage units are disposed to be removable with respect to the device main body from the other end side in the longitudinal direction.

Cash processing apparatus

A medium processor is provided with a medium storage which can house two small storing boxes next to each other and has plural slots into which the two small storing boxes can be detachably loaded. Thus, the two small storing boxes can be loaded in a space equivalent to one conventional bill storing box, and the small storing boxes can be detached for servicing even when there are two small storing boxes loaded in one slot. Thus, various kinds of media can be handled without impairing maintainability.

Medium processor having medium storing boxes flexibly loadable in a slot of a medium storage

A temporary storage in a medium storing device carries out ON/OFF monitoring of a jam sensor between a winding start position of a drum and a clamp point of a delivering roller. Accordingly, when bills are rewound in the reset operation, even when a relationship between a pulse count and a bill position becomes different from actual one, it is possible to detect, without using a pulse count, a jam between the winding start position and the clamp point. It is possible to more securely detect the abnormality in bill storing in comparison with the prior art.

Medium storing device

A semiconductor device includes an SOI substrate, a first STI-type isolation region, a second STI-type isolation region, and an alignment mark region. The SOI substrate includes a support substrate, an insulating layer deposited on the support substrate, and a semiconductor layer which includes a thin film region and a thick film region. The thin film region includes a first semiconductor layer deposited on the support substrate, and the thick film region includes the first semiconductor layer and a second semiconductor layer deposited on a part of the first semiconductor layer. The first STI-type isolation region is disposed at the thin film region. The second STI-type isolation region is disposed at the thick film region. The alignment mark region is disposed at the thick film region. An alignment mark to be used for alignment of the second STI-type isolation region is disposed at the alignment mark region.

Semiconductor device and method of manufacturing the same

A nonvolatile semiconductor storage device is provided in which memory cells comprising PN junction diodes having satisfactory rectifying characteristics are arranged in three dimensions. The semiconductor storage device includes: a first wire which extends in one direction; a second wire which extends in a direction intersecting the first wire; and a memory cell which is positioned at a portion of intersection of the first wire with the second wire between the first wire and the second wire, the memory cell comprising a storage element and a PN junction diode connected thereto, positioned on a side of the second wire used in selecting the memory cell, and a P-type semiconductor forming the PN junction diode forms a portion of the second wire, wherein a plurality of structures, each structure comprising the first wire, the second wire, and the memory cell is provided three-dimensionally.

Semiconductor storage device and method of manufacturing the same

In a fabric to assist a vehicle to run in the presence of snow, sand, or mud, or in an unleveled land, a core fabric is formed by weaving the weft and the warp. An upper convexity warp which is disposed over the core fabric forming warp and is woven with an upper convexity weft disposed on the core fabric forming weft, and/or a lower convexity warp which is disposed under the core fabric forming warp and is woven with a lower convexity weft disposed under the core fabric forming weft, to form a convexity. The upper or lower convexity warp is woven with one or plurality of the core fabric forming wefts to form a woven portion.

Vehicle running assisting fabric

The invention provides a method of fabricating a semiconductor device, including the steps of (a) forming an impurity region at a surface of a silicon substrate, (b) depositing an insulative film over the silicon substrate, (c) forming a contact hole through the insulative film to expose the impurity region of the silicon substrate, (d) forming an electrode wiring over the contact hole, the electrode wiring comprising a refractory metal silicide film and a silicon film overlying on the metal silicide film, the metal silicide film overlying the exposed impurity region, (e) depositing a second insulative film over a resultant, (f) depositing a polysilicon film on the second insulative film, (g) patterning the polysilicon film to form an element, and (h) heat-treating a resultant at high temperature in oxidizing atmosphere. The step (h) is to be carried out at any time after the step (f) has been completed. In the method, even if a semiconductor device is heat-treated at high temperature in oxidizing atmosphere, there occurs no voids in the silicon substrate below the refractory metal silicide film. This is because silicon atoms are supplied from the silicon film overlying on the refractory metal silicide film to the metal silicide film. Thus, reliable electrical connection between the electrode wiring and the silicon substrate is ensured.

Method of fabricating semiconductor device including high temperature

An alignment accuracy check pattern includes a contact hole formed in an insulating film on a major surface of a semiconductor substrate in a region different from an element region, and a photoresist for patterning which is formed in at least part of the contact hole. A wiring layer is formed under the insulating film, and another insulating film is formed under the wiring layer.

Growing community of inventors

Tokyo, Japan

Shinji Ohara