Fuji Electric Co., Ltd.

Shinji Ogino

Tatsuo Urushidani

Shoji Kitamura

Yoichi Shindo

Hiroshi Kanemaru

Katsunori Ueno

Koichi Hashimoto

Yasukazu Seki

Hiromi Mojikawa

Koji Nemoto

Naokazu Sakamoto

Ken Komatsu

Takao Suyama

A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound.

Schottky barrier diode

A semiconductor laser device is provided which includes a laser diode chip mounted on a sub-mount, a monitor photo diode incorporated in the sub-mount, for monitoring a laser beam emitted by the laser diode chip, a metallic main plate mounting the laser diode chip and the monitor photo diode, an end-face breaking protective layer covering the laser diode chip and the sub-mount; and a seal resin in which the laser diode chip, the monitor photo diode, the end-face breaking preventive layer and at least a portion of the metallic main plate are sealed. In this semiconductor device, a space is provided at a portion of an interface between the end-face breaking preventive layer and the seal resin, which portion is adapted to be irradiated with a monitor laser beam emitted by the laser diode chip, with a light intensity that is not higher than a half of a peak value of the intensity of the monitor laser beam.

Semiconductor laser device and method for manufacturing the same

A semiconductor laser device is provided which includes: a metallic main plate to which a laser diode chip is fixed through a sub-mount incorporating a photo diode and which serves as an electric common for these diodes; three metallic posts that are electrically connected by wires to the main plate, laser diode chip and photo diode, respectively, and are spaced apart from the main plate; and a resin case in which the laser diode chip and sub-mount are sealed and to which fixing end portions of the main plate are fixed. The resin case secures the main plate and the three posts in position such a way as to avoid direct contact therebetween.

Semiconductor laser device

A Schottky electrode is formed on an n-type SiC base member with an Al--Ti alloy or by laying Al films and Ti films alternately, and a resulting structure is subjected to a heat treatment of 600.degree. C. to 1,200.degree. C. A p-type SiC layer may be formed around the Schottky junction so as to form a p-n junction with the n-type SiC base member.

Manufacturing method of SiC Schottky diode

A silicon carbide substrate is dry-polished using chromium oxide Cr.sub.2 O.sub.3, ion oxide Fe.sub.2 O.sub.3, or cerium oxide CeO.sub.2 to obtain a good polished surface free of mechanical defects and with less crystal distortion. Films are then formed on the surface to create an improved electronic device.

Surface polishing of silicon carbide electronic device substrate using

Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does not increase even when high temperatures are maintained. Bonding is facilitated when Au layer is formed on top of the Ni layer.

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Kanagawa, Japan

Shinji Ogino