Hitachi, Ltd.

Shinji Nomoto

Masahiro Masunaga

Ryo Kuwana

Isao Hara

A semiconductor device includes an electrostatic protection circuitand a MOSFETincluding a gate terminal. The electrostatic protection circuitincludes a positive-side power supply terminal, a negative-side power supply terminal, a first protection diode, a second protection diode, a resistance element, and a bipolar transistor. The second protection diodeincludes an anode terminal electrically connected to the negative-side power supply terminalvia the resistance element, and a cathode terminal electrically connected to the gate terminal. The bipolar transistorincludes a base terminal, an emitter terminal, and a collector terminal. The bipolar transistoris electrically connected to the anode terminal of the second protection diode, the gate terminal, and the positive-side power supply terminal. The electrostatic protection circuitis formed on a semiconductor substrate made of silicon carbide.

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Tokyo, Japan

Shinji Nomoto