Panasonic Corporation

Shinji Nishiura

Shinichiro Hayashi

Itaru Ootani

A conductive film embedded in a predetermined region on an upper surface of an insulation film and metallic wirings embedded so as to penetrate through the conductive film and protrudes into the insulation film constitute a lower electrode of an MIM capacitor.

Semiconductor device comprising MIM capacitor

An MIM capacitance element (capacitance lower electrode, capacitance insulation film and capacitance upper electrode) is provided on a first insulation film on a semiconductor substrate. An interlayer insulation film is provided so as to cover the MIM capacitance element and flattened. The interlayer insulation film is provided with a first connection plug connected to the capacitance upper electrode, a first wiring layer, and a second wiring layer. A second insulation film is provided on the interlayer insulation film. The second insulation film is provided with first and second openings. A wiring pull-out portion which connects the first connection plug and the second wiring layer to each other is provided on the second insulation film.

Growing community of inventors

Toyama, Japan

Shinji Nishiura