Sharp Kabushiki Kaisha Corporation

Shinji Nakajima

Hirohiko Nishiki

Shogo Murashige

Tohru Okabe

Izumi Ishida

Yujiro Takeda

Yuto Tsukamoto

Manabu Niboshi

Hideki Uchida

Eiji Koike

Yoshiyuki Isomura

Yuhichi Saitoh

Asae Ito

Hirohide Mimura

A semiconductor device includes a substrate and an oxide semiconductor TFT supported by the substrate. The oxide semiconductor TFT includes an oxide semiconductor layer containing In, Ga, and Zn, a gate electrode, a gate insulating layer formed between the gate electrode and the oxide semiconductor layer, and a source electrode and a drain electrode that are in contact with the oxide semiconductor layer. The oxide semiconductor layer has a layered structure that includes a first layer, a second layer, and an intermediate transition layer disposed between the first layer and the second layer, and the first layer is disposed closer to the gate insulating layer side than the second layer. The first layer and the second layer have different compositions, and the intermediate transition layer has a continuously changing composition from the first layer side toward the second layer side.

Semiconductor device provided with oxide semiconductor TFT

Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500&#xb0; C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

Method for manufacturing semiconductor device and film forming apparatus

Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350&#xb0; C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Active matrix substrate, manufacturing method therefor and display device

A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (); a light-transmitting film (); and a first wiring layer (A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (A) being provided over the light blocking film (), and the light-transmitting film () being provided over the first wiring layer (A) so as to cover a side surface of the first wiring layer.

Display panel, display apparatus, and method for manufacturing display panel

To provide an organic EL element having good injection properties and transport properties of a carrier. Included are: an InGaZnO layer with a composition rich in InOas a transparent electrode contacting a negative electrode; an InGaZnO layer with a stoichiometric ratio of In:Ga:Zn:O=1:1:1:4 as an electron injecting layer; and an InGaZnO layer with a composition rich in GaOas an electron transport layer contacting a light emitting layer.

Organic electroluminescence element, organic electroluminescence display device, and method for producing organic electroluminescence element

Growing community of inventors

Sakai, Japan

Shinji Nakajima