Shimadzu Corporation

Matsushita Electric Industrial Co., Ltd.

Shinji Nagamachi

Masahiro Ueda

Kei Shinada

Mitsuyoshi Yoshii

Hiroshi Sakakima

Mitsuo Satomi

Yoshio Takami

Yoshio Tsunazawa

Ichiro Oda

Yasuhiro Yamakage

Kentaro Hizume

Masakatsu Sakisaka

Disclosed herein is a fluorescence measurement device for a living body configured to be able to reduce wavelength components that will become leak light and to easily switch a wavelength and an irradiation direction. The fluorescence measurement device for a living body comprises: a sample holder on which a living body sample is to be placed; an exciting light-irradiating device having a plurality of exciting light sources arranged at mutually different positions, each of which is composed of a laser diode or a light-emitting diode and is provided with a filter having an optical property to eliminate, from a spectrum of the exciting light source, disturbing wavelength components overlapping with wavelength components of fluorescence to be detected; an electrical switch for switching lighting of the exciting light sources; a detector for picking up an image produced by fluorescence emitted from the sample placed on the sample holder; and an image display device for displaying the image picked up by the detector.

Fluorescent measurement device for living body and exciting light-irradiating device for fluorescent measurement

Magneto-resistance effect element, magneto-resistance effect type head,

A Josephson junction includes a substrate, a first superconducting layer, a second superconducting layer transversely overlaid on the first layer with an insulating layer interposed therebetween, the insulating layer is an oxide or a nitride of the superconducting material, and the insulating layer including a low oxygen- or nitrogen-concentrated area in contact with each of the first and second layers. A process for fabricating the Josephson junction includes the steps of preparing a substrate, forming a first superconducting layer, forming a second superconducting layer transversely on the first layer with an insulating layer interposed therebetween wherein the insulating layer is an oxide or nitride of the superconducting material, and injecting ion beams into the insulating layer so as to form low oxygen- or nitrogen-concentrated area linking the first and second layers.

Josephson junctions and process for making same

A particle beam is irradiated locally to a film of an alloy or compound containing atoms of two or more elements, causing atoms of a specific element in the film to selectively recoil to the outside of the film, such that there is formed, inside of the film, a zone in the form of a pattern in which the rate of the atoms of the specific type is smaller than in other portions of the film. In the fine pattern thus formed, the thickness is substantially equal to that of the film, and other sizes are determined according to the particle beam irradiation zone. For example, when a focused ion beam is used as the particle beam, there can be formed a fine pattern on the 10-nm level with precision of the order of nm. This fine pattern can be a quantum wire, a quantum dot or the like. It is therefore possible to produce, with good reproducibility, a device in which a quantum effect has been utilized.

Fine pattern forming method and fine pattern device

A process for fabricating the Josephson junction includes the steps of preparing a substrate, forming a first superconducting layer, forming a second superconducting layer transversely on the first layer with an insulating layer interposed therebetween wherein the insulating layer is an oxide or nitride of the superconducting material, and injecting ion beams into the insulating layer so as to form low oxygen- or nitrogen-concentrated area linking the first and second layers.

Process for making josephson junctions

A focused ion beam apparatus which includes an ion source, an extraction electrode for extracting ion beams from the ion source, a condenser lens for focusing the ion beam, a mass spectrometer for separating a desired ion species from the extracted ion beams, a target stage adapted to support a target, deflection electrodes for deflecting the ion beam taken from the mass spectrometer, and guiding same to the target on the stage, wherein the condenser lens group includes an objective lens located immediately before the target stage, and including a decelerating field circuit for forming a decelerating field between the target stage and the outermost electrode of the objective lens, the deflection electrode having a two-stage structure consisting of a first and second group of deflection electrodes in the advancing direction of ion beam, wherein the ion beam deflected by the deflection electrodes is caused to pass through the center of the objective lens irrespective of the amount of beam deflection.

Apparatus for focusing an ion beam

An acceleration/deceleration tube comprises a plurality of pairs of opposing electrodes alternatively positioned to be orthogonal along the opposing direction and overlapped by each other along the direction of the common axis, and a DC power source provided for applying specific DC voltages with a potential difference of a particular direction to each of the pairs of opposing electrodes according to the arrangement order along the common axis.

Growing community of inventors

Nara, Japan

Shinji Nagamachi