Alps Electric Co., Ltd.

Shinji Murata

Makoto Tomoyori

Munemitsu Abe

Takashi Hatanai

Manabu Tamura

Masayoshi Esashi

Masashi Fuse

Koichi Takahashi

Mitsuru Tokuta

Ken Yamamura

Kazuhiro Soejima

Hisao Miura

Masayoshi Takeuhi

Makoto Yoritomo

A variable capacitor includes a plurality of variable capacitor elements connected in parallel with one another, the variable capacitor elements each including a fixed electrode and a movable electrode facing each other, a beam supporting the movable electrode displaceably, and a drive electrode supplied with a drive voltage to change spacing between the fixed electrode and the movable electrode. The variable capacitor further includes a drive control unit configured to sequentially apply an AC drive voltage to the drive electrodes of the variable capacitor elements with a predetermined phase difference for each element. The sum of capacitances of the variable capacitor elements is an output capacitance.

Variable capacitor

A multilayer ceramic circuit board includes ceramic wiring layers which are stacked together, one or two or more lifting layers which have a planar shape and which are disposed as an inner layer inside the stacked ceramic wiring layers or as a lower layer lower than a bottom ceramic wiring layer, and a protruding portion formed on a surface of a top ceramic wiring layer due to the disposition of the one or two or more lifting layers. The protruding portion smoothly protrudes and has a large area and high flatness. The multilayer ceramic circuit board is formed by disposing lifting layers as an inner layer of a plurality green sheets or as a lower layer lower than a bottom green sheet, and firing under pressure the resulting laminate in a state constrained by an elastic constraining sheet and a rigid constraining sheet.

Multilayer ceramic circuit board having protruding portion and method for manufacturing the same

A probe card includes a base wiring layer, a rewiring layer, and a contactor. The base wiring layer has a non-contactor area and a contactor area that projects to a higher level than the non-contactor area. The rewiring layer is formed on a surface of the base wiring layer so that the contactor area is higher than the non-contactor area. The contactor is provided on a surface of the rewiring layer in a contactor area thereof.

Probe card including contactors formed projection portion

A method according to the present invention for producing a semiconductor-chip-mounting circuitincludes mainly three steps. In a first step, contactseach in the form of a conical helix are formed by solder-plating the surface of connecting terminalson a mounting circuitIn a second step, a continuity test is performed by pressing bumpsagainst the contactsIn a final third step, the contactspressed are melted to connect the connecting terminalsto the bumpsThat is, the semiconductor chipis connected to the mounting circuitwhile maintaining a state in which they pass the continuity test, thereby significantly reducing the occurrence of defective continuity in the semiconductor-chip-mounting circuit

Mounting circuit and method for producing semiconductor-chip-mounting circuit

A glass substrate has a pair of main surfaces opposite to each other. Two island-shaped portions made of silicon are buried in the glass substrate. The two island-shaped portions are exposed from the two main surfaces of the glass substrate, respectively. An electrode is formed on one main surface of the glass substrate so as to be electrically connected to one exposed portion of one island-shaped portion, and another electrode is formed thereon so as to be electrically connected to one exposed portion of the other island-shaped portion. Still another electrode is formed on the other main surface of the glass substrate so as to be electrically connected to the other exposed portion of the one island-shaped portion. A silicon substrate having a pressure sensing diaphragm is bonded to the other main surface of the glass substrate.

Glass substrate and capacitance-type pressure sensor using the same

A Contact according to an aspect of the present invention is formed by laminating a shape memory alloy film on a surface of a metal spring film, and the shape thereof is a conical spiral. A manufacturing method therefor is composed of 11 steps including a step of preparing a sacrificial metal film, a step of forming a resist cone, a step of patterning a resist film, a step of preparing a shape memory alloy film, and the like. Since an organic resist material has poor heat resistance, the sacrificial metal film is formed in advance, the resist is removed before sputtering of the shape memory alloy film, the sacrificial metal film is removed after sputtering of a shape memory alloy and a heat treatment, which are performed at high temperatures, so as to lift off an excess shape memory alloy film.

Semiconductor device contact resistant to deterioration due to heat and method for manufacturing contact

A variable capacitance element of the invention includes: a columnar vibrator formed inside a cylindrical hole of a supporting wall; a first circular driving electrode disposed above the columnar vibrator; a first circular capacitive electrode disposed in the middle of the columnar vibrator; a second circular driving electrode disposed on the periphery of the cylindrical hole of the supporting wall; and a second circular capacitive electrode disposed on an inner side surface of the supporting wall. An electrostatic force is increased or decreased sequentially in the circumferential direction of the second driving electrode that is divided into four parts by sequentially increasing or decreasing the driving voltage in the circumferential direction of the second driving electrode. As a result, the columnar vibrator is rotated to change the electrostatic capacitance between the first capacitive electrode and the second capacitive electrode.

Rotary variable capacitance element and rotary variable capacitance device

There is provided a structure for mounting a semiconductor part having improved productivity, in which a bump is detached from a land portion and a method of manufacturing a mounting substrate used therein. The structure for mounting the semiconductor part includes a mounting substratehaving an insulating substrateon which a wiring patternand a land portionare provided, a semiconductor partmounted on the mounting substrateusing a bumpand the land portion, and an underfillinserted between the semiconductor partand the insulating substrate. An undercut portionhaving an inverse tapered shape from the insulating substrateto an upper surface of the land portionis provided in an edgeof the land portionin which the bumpis located, and the bump is inserted into the undercut portion. Accordingly, since the couple between the bumpand the land portionbecomes stronger, the bump is not detached from the land portionwhen the underfillexpands or contracts.

Structure for mounting semiconductor part in which bump and land portion are hardly detached from each other and method of manufacturing mounting substrate used therein

Provided is a wiring portion capable of suppressing diffusion from occurring in a wiring portion or between the wiring portion and a substrate. In the wiring substrate, a first high melting point metal portionhaving a melting point higher than Au and Ag is provided between an Au wiring portionand an Ag wiring portion. The higher the melting point of the first high melting point metal portion, the lower a coefficient thereof, that is, the harder diffusion occurs. In addition, the first high melting point metal portionfunctions as a barrier material which adequately suppresses Ag from being diffused from the Ag wiring portion. By providing the first high melting point metal portionbetween the Au wiring portionand the Ag wiring portion, it is possible to more efficiently suppress Ag from diffusion, in comparison with a case where the Ag wiring portion and the Au wiring portion are in contact with each other.

Wiring substrate

In order to provide an electronic circuit board capable of preventing the breakdown voltage of a capacitor element from dropping and excellent in high frequency performance, a positive type photoresist is spin-coated over the surface of an alumina substrate and is exposed to light and developed to form an insulating layer partially, followed by formation of a capacitor element by successively stacking a lower electrode, a dielectric layer and an upper electrode over this insulating layer, further followed by formation of a resistance element, an inductor element and a transmission line, each in a filmy state, over the surface of the alumina substrate.

Thin-film capacitor element and electronic circuit board on which thin-film capacitor element is formed

The invention provides a gyroscope that brings about the miniaturization of a device, improvement of detection sensitivity, and reduction of driving voltage. A gyroscope of the present invention is provided with a tuning fork formed of conductive material having a plurality of legs and a support, a top glass substrate and a bottom glass substrate for holding the tuning fork in-between, a plurality of driving electrodes for driving the plurality of legs in capacitance coupling with the legs, and a plurality of detecting electrodes, each detecting electrode is disposed so as to face to the end face of each leg in the extending direction correspondingly to each leg.

Gyroscope and input apparatus using the gyroscope that detects displacement of leg of tuning fork by means of capacitance change when angular velocity is entered

A silicon gyroscope comprises a vibrator,which is made from a silicon wafer and has three elastic arms,separated by two notches, with part of the root section of vibrator which supports the elastic arms being fixed to a base plate,, horizontal electrodes,which are laid between the elastic arms and on the outer sides of the elastic arms by being orthogonal to the plane of layout of the elastic arms and close to the elastic arms, and vertical electrodes,which are laid in correspondence to the elastic arms by being parallel to the arm layout plane and close to the elastic arms. The silicon gyroscope which is driven in innovative manner is capable of stably detecting the angular velocity.

Silicon gyroscope and method of driving the same

An LED array head has an LED array which selectively emits light. The LED array is mounted on a substrate in a flip chip form with a light emitting section located opposed to a surface of the substrate. A fiber bundle including a plurality of optical fibers is buried in the substrate with an end portion of the fiber bundle located at a position in the vicinity of the light emitting section of the LED array.

LED array head using a fiber bundle

Disclosed is here an LED array head in which a light emitting section thereof is selectively caused to emit light wherein a fiber bundle constituted with a plurality of optical fibers is arranged with an end portion thereof to be located at a position in the vicinity of the light emitting section. The base member for retaining fiber bundle is a protection member to protect the LED array.

Led array head

Disclosed is here an LED array head in which a light emitting section thereof is selectively caused to emit light to expose an object to the light wherein a fiber bundle constituted with a plurality of optical fibers is arranged with an end portion thereof to be located at a position in the vicinity of the light emitting section and another end portion of the fiber bundle is formed to have a curved surface, which is brought into contact with the object.

Growing community of inventors

Fukushima-ken, Japan

Shinji Murata