Mitsubishi Gas Chemical Company, Inc.

Sumitomo Metal Industries, Inc.

Kyushu University

Shinji Munetoh

Osamu Furukimi

Kazuhito Kamei

Kazuhiko Kusunoki

Tetsuhiko Mizusaka

Ryo Teranishi

Shoichiro Sueoka

A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1&#xd7;10/&#x3bc;m or more.ABC&#x2003;&#x2003;(I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

Semiconductor substrate and method for producing same, substrate, and laminate

A semiconductor crystal containing a clathrate compound represented by the following formula (I), the semiconductor crystal having one end portion and the other end portion, wherein the one and the other end portions differ in concentration of at least one element in the formula (I):ADE&#x2003;&#x2003;(I)wherein A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, D represents at least one element selected from the group consisting of B, Ga, and In, E represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 or more and 8 or less, and y is 14 or more and 20 or less.

Semiconductor crystal and power generation method

A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as SiM, is 0.1&#x2266;x&#x2266;0.7 in the case where M is Mn or 0.1&#x2266;x&#x2266;0.25 in the case where M is Ti at a temperature of the melt which is below 2000&#xb0; C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.

Silicon carbide single crystal and a method for its production

Growing community of inventors

Fukuoka, Japan

Shinji Munetoh