Kabushiki Kaisha Toshiba

Ntn Corporation

Tokyo Electron Limited

Tokyo Electron Sagami Limited

Toshiba Memory Corporation

Shinji Miyazaki

Takuji Harano

Takahiko Moriya

Ikuo Uemoto

Reiji Niino

Tatsuo Nakajima

Yoshiyuki Fujita

Yuuichi Mikata

Katsuya Okumura

Toshiharu Nishimura

Hideki Lee

Takayuki Oda

Yasuo Imamura

Mituaki Komino

Mari Kusunoki

Hitoshi Kato

Yoshitaka Tsunashima

Toru Takahashi

Natsuhiko Mori

Atsushi Endo

Yasushi Yagi

Susumu Tanaka

Eiichirou Shimazu

Takuo Ohashi

Hiroyuki Noda

Norihiko Kamiura

Yuichi Mikata

Yoshio Kumagai

Hiroyuki Hakamata

Kayo Sakai

Hiroki Fukushima

Katuhiko Iwabuchi

Katushin Miyagi

Motohiko Nishimura

There is provided a compression-bonded magnet with a case, which can realize high magnetic properties, high corrosion resistance and high durability strength even at low cost. The compression-bonded magnet with a case is a compression-bonded magnet with a case, comprising: a compression-bonded magnetcomprising a rare earth magnet powder such as an isotropic Nd&#x2014;Fe&#x2014;B magnet powder and a resin binder of a thermosetting resin; a casefor inserting the compression-bonded magnet; and a sealing member, wherein the compression-bonded magnetis formed by compression-molding a mixture comprising the rare earth magnet powder and the resin binder into a green compact and curing the resin binder contained in the green compact, the rare earth magnet powder is contained in a large amount with respect to the entire compression-bonded magnet (for example, in a volume ratio of 85% to 90%), the sealing memberis fixed at an insertion opening partof the case, and the compression-bonded magnetis hermetically sealed by the sealing memberand the case

Compression-bonded magnet with case and method for producing the same

According to one embodiment, an exhaust system includes a first pump unit, a second pump unit, a shaft, and a motor. The first pump unit includes a first exhaust chamber, a first intake port, a first exhaust port, and a first rotor. The first intake port, the first exhaust port, and the first rotor are provided in the first exhaust chamber. The second pump unit includes a second exhaust chamber, a second intake port, a second exhaust port, and a second rotor. The second intake port, the second exhaust port, and the second rotor are provided in the second exhaust chamber. The shaft links the first rotor and the second rotor. The motor causes the first rotor, the second rotor, and the shaft to rotate.

Exhaust system, semiconductor manufacturing equipment, and method for operating the exhaust system

The present invention provides a magnetic core which can be produced with improved productivity without increasing a material cost and has required magnetic and mechanical properties and a process for producing the same. The magnetic core is produced by compression molding and thereafter thermally hardening iron-based soft magnetic powder having resin films formed on surfaces of particles thereof. The resin film is an uncured resin film formed by dry mixing the iron-based soft magnetic powder and epoxy resin containing a latent curing agent with each other at a temperature not less than a softening temperature of the epoxy resin and less than a thermal curing starting temperature thereof. The iron-based soft magnetic powder having the resin films formed on the surfaces of the particles thereof is compression molded by using a die to produce a compression molded body. The compression molded body having the resin films formed on the surfaces of the particles thereof is thermally hardened at a temperature not less than the thermal curing starting temperature of the epoxy resin.

Magnetic core and process for producing same

According to one embodiment, an epitaxial growth apparatus includes a processing chamber, an exhaust pipe, and an introducing pipe. The exhaust pipe is communicated with the processing chamber. The introducing pipe is communicated with the exhaust pipe and an alkaline gas is introduced into the exhaust pipe via the introducing pipe.

Epitaxial growth apparatus and method of manufacturing a semiconductor device

The present invention provides a composite magnetic core, containing magnetic powders poor in its moldability, which can be configured arbitrarily and has a magnetic characteristic excellent in direct current superimposition characteristics and a magnetic element composed of the composite magnetic core and a coil wound around the circumference thereof. A compressed magnetic body () obtained by compression-molding magnetic powders is combined with an injection-molded magnetic body () obtained by mixing a binding resin with magnetic powders having surfaces thereof electrically insulated and by injection-molding a mixture of the magnetic powders and the binding resin. The compressed magnetic body () is press-fitted into the injection-molded magnetic body () or bonded thereto at a combining portion thereof to obtain the combined body. The combined body is composed of the injection-molded magnetic body () constituting a housing in which the compressed magnetic body () is disposed.

Composite magnetic core and magnetic element

The present invention provides a magnetic element in which iron loss-caused heat generation is restrained and which can be produced with a high productivity. The magnetic element has a magnetic body which allows a magnetic flux generated by a coil () to pass therethrough. The magnetic body is a combined body formed by combining two halves, of the magnetic body composed of the compression molded and injection molded bodies, obtained by bisection made in an axial direction of the coil with each other. A compression molded magnetic body () is disposed at a portion generating iron loss-caused heat to a high extent or a portion inferior in heat dissipation performance. An injection molded magnetic body () is disposed at a portion other than the portion where the compression molded magnetic body is disposed. The compression molded and injection molded magnetic bodies are combined with each other.

Magnetic element

A magnetic encoder device () of the present invention includes a base portion () having a mounting surface () for mounting to a rotary shaft (), a cored bar () fitted and fixed over the base portion (), and a double-row magnetic encoder track () formed on the cored bar (). Through movement of each of magnetic poles of the magnetic encoder track () over a region opposed to a magnetic sensor (), an angle of the rotating rotary shaft is detected. The base portion () is formed of a sintered metal, and the mounting surface () is subjected to sizing.

Magnetic encoder device and rotation detection device

According to one embodiment, a vaporizing system comprises first and second tanks that can accumulate liquid source and first, second, and third pipes. The first pipe allows first gas to be sent out of the first tank. The second pipe allows second gas to be sent out of the second tank. The third pipe is connected to the first and second pipes and allows the first and second gas to be sent out to an external apparatus. The first tank is placed on an upper side of the second tank in a stacked manner.

Vaporizing system

A pressure control device according to an embodiment includes a solenoid portion for regulating a gate opening of a valve through a first shaft portion connected to the valve, a micrometer for regulating the gate opening through the first shaft portion and a second shaft portion having an axial direction which is parallel with that of the first shaft portion when the second shaft portion is connected to the first shaft portion, and a switching portion. The switching portion switches to cause the solenoid portion to regulate the gate opening or to cause the micrometer to regulate the gate opening.

Pressure control device

A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.

Film forming system and film forming method

A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.

Vertical heat processing apparatus and method for using the same

After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

Method of cleaning reaction tube and exhaustion piping system in heat

Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

Method of cleaning reaction tube

Growing community of inventors

Mie, Japan

Shinji Miyazaki