Ricoh Company, Ltd.

Nissan Motor Company Limited

Hitachi, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Heavy Industries Limited

Mitsubishi Hitachi Power Systems, Ltd.

Mitsubishi Power, Ltd.

Clarion Co

Hitachi Consumer Electronics Co., Ltd.

Asahi Kasei E-materials Corporation

Ezaki Glico Co., Ltd.

Mitsubishi Wireless Communications, Inc.

Shinji Matsumoto

Yuki Nakamura

Naoyuki Ueda

Yuji Sone

Yukiko Abe

Ryoichi Saotome

Sadanori Arae

Minehide Kusayanagi

Satoshi Tange

Genpei Naito

Akira Sasano

Katsuhiko Yarita

Hideaki Taniguchi

Mikiko Takada

Hirofumi Suzuki

Ryouji Oritsuki

Sakae Someya

Ryuuzoh Nashimoto

Daisuke Goto

Takuji Kato

Takashi Okada

Toshiya Sagisaka

Masataka Mohri

Takuichiro Daimaru

Tatsuya Suzuki

Kenichi Arima

Satoshi Yamamoto

Masato Shinoda

Yoshinori Uchida

Yuichi Ando

Kazushi Fukui

Masayasu Shimakage

Hiroyuki Yoshizawa

Keiichiro Yutani

Tamotsu Aruga

Masafumi Torii

Hideaki Inoue

Sunao Hano

Hirotsugu Yamaguchi

Tsugio Yamamoto

Takeshi Kimura

Atsushi Ishibashi

Shigehisa Hagura

Masahide Nakamura

Taku Takahama

Hiromitsu Toyota

Hidechika Uchida

Takashi Tsutsuba

Taku Miyazaki

Masahiko Taniguchi

Hiroshi Ikuno

Tamotsu Horiuchi

Takanori Tano

Takeshi Orito

Seiichi Sekiguchi

Kazuhiro Takeuchi

Genpei Naitou

Yasuhiro Sueoka

Masaomi Sasaki

Hiroyuki Kobayashi

Kazuto Kobayashi

Akira Hashimoto

Minoru Ikeda

Masaki Tsubokura

Hiroshi Matsuyama

Yoshinori Kobayashi

Jun Kubo

Kazuomi Kaneko

Yoshihiro Iwama

Masayuki Ohki

Susumu Sato

Shozo Kaneko

Robin U Roberts

Kimishiro Tokuda

Atsutoshi Sato

Yuta Kawaguchi

Jun Koike

Yoshimasa Yokoyama

Kazumasa Ueoka

Koutaro Fujimura

Kiyonori Kushioka

Tomohiro Fukumura

Takanori Tsutsumi

Hideto Murakami

Manabu Oda

Mikiharu Kuwata

Toshiyuki Takegawa

Katsuhiko Shinoda

Kosuke Kitakaze

Masayasu Sakai

Naotaka Usui

Yuta Takahashi

Yoshimi Saito

Norichika Kai

Sho Nozue

Junya Nakamura

Hidekazu Nakajima

A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.

Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor

A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system

To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor

A classifier including a housing to take in air flow from below into a radially outer region of an inside space; a flow deflection portion to deflect the air flow toward a center axis of the housing; and an annular rotational portion disposed rotatably in a radially inner region positioned on a radially inner side of the radially outer region, of the inside space of the housing, and configured to classify particles which accompany the air flow. The annular rotational portion includes a plurality of rotational blades arranged at intervals around a rotational axis of the annular rotational portion. The plurality of rotational blades form an outer shape of the annular rotational portion forms an angle &#x3b8; of not greater than 75&#xb0; with a segment extended in a horizontal direction from the annular rotational portion outward in a radial direction, in a side view of the annular rotational portion.

Classifier, pulverizing and classifying device, and pulverized coal burning boiler

A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

Coating liquid for forming metal oxide film, oxide film, field-effect transistor, and method for producing the same

A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

Field-effect transistor, display element, image display device, and system

An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.

Inorganic el element, display element, image display device, and system

A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

Sputtering target for insulating oxide film, method for forming insulating oxide film, and method for producing field-effect transistor

(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

Field-effect transistor, method for producing same, display element, display device, and system

A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by Cmg/L and a total of concentrations of the B element is denoted by Cmg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (C+C)/10mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (C+C)/10mg/L or less.

Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor

A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21&#xb0; C. or more but less than 200&#xb0; C. and water.

Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same

A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.

Field-effect transistor, method for producing the same, display element, image display device, and system

A pulverizing device includes: a housing; a pulverization table configured to rotate inside the housing; and a throat, disposed inside the housing on a radially outer side of the pulverization table, for forming an upward air flow. The throat includes: an inner ring extending along an outer periphery of the pulverization table; an outer ring, disposed on a radially outer side of the inner ring so as to form an annular flow passage between the inner ring and the outer ring; and a plurality of throat vanes disposed between the inner ring and the outer ring. The following expressions are satisfied: 2.0&#x2264;L/d&#x2264;4.0; and 0.5&#x2264;H/d&#x2264;1.5, where H is a gap between the inner ring and the outer ring with respect to a radial direction, L is a length of the throat vanes, and 'd' is a distance between adjacent two of the throat vanes.

Pulverizing device, throat for pulverizing device, and pulverized-coal fired boiler

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCuO where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and x and y satisfy the following expressions: 0&#x2264;x&#x3c;100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system

The present invention improves the even distribution of a powder to a pulverized coal pipe. A rotary classifier including: a rotary shaft rotatably supported around a rotational axis extending in a vertical direction; a frame body supported by the rotary shaft and including an opening on the outer periphery of the frame body; a plurality of powder outlets provided along the rotation direction and opening on the upper section of the frame body; a plurality of blades extending in the vertical direction at the opening on the outer periphery of the frame body and provided along the rotation direction; and an annular member that serves as a constricting section provided so as to narrow the interval from the blades to the rotary shaft.

Rotary classifier and vertical mill

Growing community of inventors

Kanagawa, Japan

Shinji Matsumoto