Dai Nippon Printing Co., Ltd.

Shinji Maekawa

Masaaki Asano

Hiroshi Mawatari

Takamasa Takano

Hiroshi Kudo

Yoshiaki Tsuruoka

Miyuki Suzuki

Masafumi Sato

Myuki Suzuki

A through electrode substrate includes a substrate provided with a through hole, a through electrode positioned in the through hole, and a first wiring structure including at least a first wiring layer positioned on a first surface of the substrate, and a second wiring layer positioned on the first wiring layer. The first wiring layer and the second wiring layer respectively have an insulation layer and an electroconductive layer. A first insulation layer of the first wiring layer includes at least an organic layer. At least one wiring layer of the first wiring structure includes an inorganic layer having insulation properties, the inorganic layer being positioned to a first side of the organic layer of the first insulation layer of the first wiring layer.

Through electrode substrate and mounting substrate

A through electrode substrate includes a substrate provided with a through hole; a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on a first surface of the substrate and connected to the sidewall portion; an inorganic film that at least partially covers the first portion of the through electrode from the first side and is provided with an opening positioned on the first portion; and a first wiring structure including at least a first wiring layer having an insulation layer that is positioned to the first side of the inorganic film and includes at least an organic layer provided with an opening communicating with the opening of the inorganic film, and an electroconductive layer connected to the first portion of the through electrode through the opening of the inorganic film and the opening of the insulation layer.

Through electrode substrate, method of manufacturing through electrode substrate, and mounting substrate

A method of manufacturing a through electrode substrate, the method includes: preparing a substrate including a first surface positioned on a first side, and a second surface positioned on a second side opposite to the first side, the substrate being provided with a through hole; forming a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on the first surface of the substrate and connected to the sidewall portion; forming an organic film inside the through hole; forming an inorganic film at least partially covering the first portion of the through electrode from the first side; forming an insulation layer positioned to the first side of the inorganic film; and forming an electroconductive layer passing through the inorganic film and the insulation layer so as to be connected to the first portion of the through electrode.

An image sensor module includes an interposer substrate having a first surface and a second surface opposite to the first surface, the interposer substrate being light-transmissive and having a plurality of through-holes; an image sensor located to face the first surface of the interposer substrate, the image sensor having a light receiving surface on a side of the interposer substrate, a plurality of photoelectric conversion elements being located at the light receiving surface, the image sensor being connected with an external circuit via electrodes provided in the plurality of through-holes; and a lens unit located to face the second surface of the interposer substrate.

Through-hole electrode substrate

A through electrode substrate includes: a substrate including first and second surfaces respectively on a first side and a second side opposite to the first, the substrate having a through hole; and a through electrode. The through electrode has a sidewall portion along the through hole sidewall, and a first portion the first surface and connected to the sidewall portion. The through electrode substrate includes: an organic film inside the through hole; an inorganic film that at least partially covers the through electrode first portion from the first side and has an opening on the first portion; and a first wiring layer having an insulation layer to the inorganic film first side and includes an organic layer with an opening communicating with the inorganic film opening, and an electroconductive layer connected to the through electrode first portion through the inorganic film opening and the insulation layer opening.

A through electrode substrate includes: a substrate; a first electrode part provided on a first surface side of the substrate; and a second electrode part provided on a second surface side of the substrate. The plurality of holes includes a plurality of first holes and a plurality of second holes. The hole electrode part of each first hole is electrically connected to the first electrode part on the first surface side of the substrate, and the hole electrode part thereof is electrically connected to the second electrode part on the second surface side of the substrate. The electrode part of each second hole is electrically insulated from the first electrode part on the first surface side of the substrate, or the hole electrode part thereof is electrically insulated from the second electrode part on the second surface side of the substrate.

Through electrode substrate and manufacturing method thereof

Image sensor module including a light-transmissive interposer substrate having a through-hole

The present invention provides an evaluation substrate for evaluating a foreign object defect included in an organic material, a defect examination method and defect detection device. The evaluation substrate of the present invention includes a substrate, a first film arranged on the substrate, and a second film arranged on the first film, wherein a film containing an organic material is formed on the second film; the first film being set lower than an etching rate of the second film with respect to an etchant used in etching the second film, the first film having the same or a smaller detection lower limit value of an optically detectable defect than a detection lower limit value of a defect of the second film; and a thickness of the second film being set to a value near an optically measured lowest or minimum Haze value.

Evaluation substrate, defect examination method and defect detection device

An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2).2&#x3c;&#x2266;2.82&#x2003;&#x2003;Expression (1)&#x2266;3.68&#x2003;&#x2003;Expression (2)

High impact resistant acceleration sensor

To provide a method of manufacturing a through hole electrode substrate which comprises forming a plurality of through holes passing through the front and back of a wafer-shaped substrate, forming an insulation film on a surface of the substrate and the though hole, forming a seed layer from a metal on at least one side of the substrate and/or the through hole, forming a metal layer having a cap shape on a bottom part of the through hole on a surface on which the seed layer is formed by an electrolytic plating method supplying direct current to the seed layer for a first time period, and filling a metal material into the plurality of through holes by an electrolytic plating method supplying a pulse current to the seed layer and the metal layer.

Method for manufacturing a through hole electrode substrate

A piezoelectric mirror device () comprises a frame portion () having a centrally located opening (), a mirror portion () positioned at the opening (), a pair of mirror support portions () adapted to support the mirror portion () rotatably relative the frame portion () and a pair of drive portions () that is a multilayer structure of lower electrodes (), piezoelectric element () and an upper electrode (). The mirror support portions () are formed of a material having a Young's modulus of up to 160 GPa, and the frame portion () includes a cutout () at a part of a site wherein there are the drive portions () positioned. The cutout () is in contact with the opening ().

Piezoelectric mirror device, optical equipment incorporating the same, and piezoelectric mirror device fabrication process

A piezoelectric mirror device fabrication process, including: dividing a silicon wafer into a multiplicity of segments, wherein on one surface of said silicon wafer per segment, a pair of lower electrodes, a mirror portion positioned between said lower electrodes and a pair of mirror support portions adapted to join said mirror portion to said lower electrodes are formed of an electrically conductive material having a Young's modulus of up to 160 GPa and a melting point higher than that of a piezoelectric element to be formed later; stacking the piezoelectric element and an upper electrode on said lower electrodes; removing the silicon wafer in a desired pattern from another surface of said silicon wafer per segment, and obtaining a multiplicity of piezoelectric mirror devices by dicing said multiplicity of piezoelectric mirror devices into individual ones.

Fabrication process for a piezoelectric mirror device

To provide a through hole electrode substrate and a semiconductor device which uses the through hole electrode substrate which have improved electrical properties in a conductive part which passes through the front and back of a substrate, a through hole electrode substrateof the invention comprises a substratehaving a through holewhich passes through the front and back of the substrate, and a conductive partincluding a metal material which is filled into the through hole, the conductive partincluding at least a metal material having an area weighted average crystal grain diameter of 13 &#x3bc;m or more. The conduction partalso includes a metal material having a crystal grain diameter of 29 &#x3bc;m or more. Further one end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of less than 13 &#x3bc;m, and the other end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of 13 &#x3bc;m or more.

Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate

An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2).2&#x3c;&#x2266;2.82&#x2003;&#x2003;Expression (1)3.68&#x2003;&#x2003;Expression (2)

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Tokyo, Japan

Shinji Maekawa