Hitachi, Ltd.

Kabushiki Kaisha Nihon Micronics

Renesas Technology Corp.

Shinji Kuniyoshi

Toshiei Kurosaki

Akihiro Takanashi

Sumio Hosaka

Yoshio Kawamura

Takayuki Hayashizaki

Hideki Hirakawa

Tsuneo Terasawa

Akira Soma

Takeshi Kimura

Masahiro Tadokoro

Yuji Miyagi

Kazuo Yamazaki

Takenobu Ikeda

Kousuke Kusakari

Hiroshi Yamaguchi

Akira Shimase

Tatsuo Harada

Susumu Aiuchi

Satoshi Haraichi

Keiya Saito

Hidehiro Kiyofuji

Kiyotoshi Miura

Kenji Watanabe

Hiroshi Okamoto

Yoshinori Nakayama

Shigeo Moriyama

Nobuyuki Akiyama

Tateoki Miyauchi

Mitsuyoshi Koizumi

Tetsuichi Kudo

Kozo Mochiji

Takashi Soga

Takao Iwayanagi

Taro Ogawa

Hisashi Maejima

Shuji Sugiyama

Tsutomu Okabe

Nobuyuki Iriki

Hitoshi Sato

Akira Souma

Masahisa Tazawa

Masamoto Akeyama

Yuko Yamada

Yosuke Yoshizawa

Akihiko Kishimoto

Takeshi Kumura

Seiya Hashimoto

Yataro Kondo

Shuji Syohda

A probe having an alignment mark that is hardly influenced by scraps of an electrode scraped by a probe tip is provided. A probe according to the present invention comprises a base portion having an attaching end and extending in a direction distanced from the attaching end, an arm portion extending from the base portion laterally with a space in the extending direction of the base portion from the attaching end, a probe tip portion protruded from the arm portion and having a probe tip formed on its protruding end, and an alignment mark for alignment of the probe tip. The arm portion has a flat surface area on the opposite side of a side where the attaching end of the base portion is located when seen along the extending direction of the arm portion. The probe tip portion is formed to be protruded from the flat surface area, and the alignment mark is constituted by at least a part of the flat surface area.

Probe and electrical connecting apparatus using it

A probe tip section of an electrical test probe has a laminated structure consisting of a first deposition portion and a second deposition portion covering the first deposition portion, and by the laminated structure, a maximum cross-sectional area portion at which the cross-sectional area of the probe tip section is increased to a base portion is provided between a tip end of the probe tip section and the base portion in the probe tip section. At the maximum cross-sectional area portion, a dimension in the X direction as seen on a flat surface perpendicular to a protruding direction of the probe tip section is increased in a one-dimensional way, and in addition, a dimension in the Y direction perpendicular to the X direction is increased from the tip end toward the base portion, as a result of which the cross-sectional area of the probe tip section can be increased in a two-dimensional way. Thus, the cross-sectional area at the maximum cross-sectional area portion reaching the base portion of the probe tip section can be made to be larger than in the conventional case, and along with the increase of the cross-sectional area, the stress acting on the base portion can be lowered.

Method for manufacturing an electrical test probe

A probe includes an arm region extending in the back and forth direction, and a tip region extending downward from the front end portion of the arm region. The tip region has a pedestal portion integrally continuous to a lower edge portion at the front end side of the arm region and having an underside inclined to an imaginary axis extending in the vertical direction; and a contact portion projected from the underside of the pedestal portion and having a tip orthogonal to an imaginary axis. Thus, the position of the tip can be accurately determined.

Probe for electrical test and electrical connecting apparatus using it

A probe assembly for use in electrical measurement of a device under test. The probe assembly comprises a plate-like probe base plate with bending deformation produced in a free state without load, and a plurality of probes formed on one face of the probe base plate to project from the face. All the tips of the probes are positioned on the same plane parallel to an imaginary reference plane of the probe base plate.

Probe assembly, method of producing it and electrical connecting apparatus

A probe for electrical test comprises a plate-shaped main portion having a base end to be attached to a support board and a tip end opposite the base end, and a probe tip portion arranged at the tip end of the main portion and having a probe tip to contact an electrode of a device under test, the main portion being made of a tenacity material. The main portion includes a conductive material extending from the base end to the tip end and at least part of which is buried within the tenacity material, and the tenacity material has higher resiliency than that of the conductive material while the conductive material has higher conductivity than that of the tenacity material. As a result, disorder of a signal provided via the probe is decreased without losing elastic deformation.

Electrical test probe

An electrical test probe comprises a probe tip portion and a probe main body portion having a pedestal portion on which the probe tip portion is formed to be protruded. The probe main body portion is made of a conductive material that is greater in toughness than the probe tip portion, and the probe tip portion is made of a conductive material that is higher in hardness than the material of the probe main body portion. On the pedestal portion is provided a probe tip reinforcement portion that contacts at least one side surface of the probe tip portion, extends toward a tip of the probe tip portion, and permits the tip of the probe tip portion to be protruded from its extending end in the extending direction. Also, the probe tip portion may be in a multi-layer structure having a first metal material layer that is higher in hardness than the tough metal material forming the probe main body portion and a second metal material layer that is greater in toughness than the first metal material layer.

Electrical test probe and electrical test probe assembly

A mounting apparatus that does not compromise the strength of a probe board. The apparatus comprises a probe board spaced from a support member by a spacer. A fixed portion with a female screw hole is mounted on one surface of the probe board. A male screw member is threaded into the screw hole for the purpose of tightening the support member to the probe board at a fixed distance defined by the length of the spacer. The probe board has a support plate. Pluralities of conductive paths penetrate the support plate. A wiring plate wherein wiring paths are connected to corresponding conductive paths, and whose one surface is fixed to the support plate. The other surface is provided with probes corresponding to the wiring paths. The fixed portion includes a female screw member at an area where no conductive paths are formed.

Probe board mounting apparatus

A probe for electrical test comprises a probe body having a base end attached to a support base plate through a solder and a front end continuous with said base end and a surface layer showing a conductivity higher than that of the probe body and a solder wettability higher than that of the probe body and extending on the surface of the probe body from the base end to the front end. In the vicinity of the base end of the surface layer, a shield region having a smaller solder wettability than that of the surface layer is formed across the surface layer.

Probe for electrical test and probe assembly

In a probe manufacturing method, after a metal material for a probe is deposited on a base table, the probe can be detached from the base table relatively easily without damaging the probe. A recess corresponding to a flat surface shape of a probe is formed by a resist mask on a sacrificial layer on a base table, and a probe is formed by depositing a probe material in the recess. Thereafter, the resist mask is removed, and further the sacrificial layer is removed by an etching process with a part of the sacrificial layer remaining. For the purpose of forming an opening for control of the remaining part of the sacrificial layer in the etching process in the probe so as to let the opening pass through the probe in its plate thickness direction, a hole-forming portion for the opening is formed in the resist mask. Etching of the sacrificial layer in the etching process is promoted from an edge of the opening formed in the probe by this hole-forming portion.

Method of manufacturing a probe

To improve the shape of a gate electrode having SiGe, after patterning a gate electrodeG having an SiGe layerby a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHFgas. Thereby, the gate electrodeG can be formed without causing side etching at two side faces (SiGe layer) of the gate electrodeG.

Fabrication method for semiconductor integrated circuit device

To improve the shape of a gate electrode having SiGe, after patterning a gate electrode G having an SiGe layer by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF gas. Thereby, the gate electrode G can be formed without causing side etching at two side faces (SiGe layer ) of the gate electrode G.

Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device

A semiconductor integrated circuit device fabrication technique improves the accuracy of element qualities by considering the influence of interaction of element quality parameters in the quality control of semiconductor fabrication processes and also by improving the product yield estimation accuracy so that the production efficiency can be improved. An initial value of a membership function is first set and then a plurality of element quality parameters and a combined quality parameter are expressed by membership functions in fuzzy control in a semiconductor fabrication apparatus for automating a fabrication method by connecting a computer with various measuring instruments and various processors by communication devices. Moreover, the combined quality parameters are fuzzy-inferred from the element quality parameters using these membership functions, inference rules are adjusted by data of the actual processes, the membership functions of the obtained element quality parameters are converted into an element quality control standard, and the semiconductor integrated circuit device fabrication processes are controlled in accordance with the standard.

Semiconductor integrated circuit device fabrication method and its

A mask for exposing a wafer with radiation and its exposition method in which the radiation exposure mask is provided with at least two radiation exposure windows which each include a mask pattern of a smaller pattern area obtained by dividing a pattern area constituting an integrating circuit chip into a plurality of the areas, and a semiconductor wafer is exposed with radiation while the radiation exposure mask is intermittently moved by a distance of the size of the small pattern area.

Mask for exposing wafer with radiation and its exposing method

Alignment in X-ray lithography is generally effected in such a manner that the surface of a target mark for alignment formed on a wafer is illuminated with light for alignment through an X-ray mask, and the position of the wafer is detected from the reflected light. On the basis of the finding that the reflected light from the mask, particularly from an absorber formed thereon, greatly degrades the precision and reliability in measurement, the present invention provides a pattern transfer mask provided with a thin film which lowers the reflection factor of the mask the thin film having a thickness set a .lambda./4n (.lambda.:the wavelength of the light for alignment; n: an integer) or an odd-number multiple thereof. Thus, it is advantageously possible to overcome the above-described lowering of precision and reliablity.

Pattern transistor mask and method of using the same

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Tokyo, Japan

Shinji Kuniyoshi