Tokyo Ohka Kogyo Co., Ltd.

Shinji Kumada

Tsuyoshi Nakamura

Daiju Shiono

Takeshi Iwai

Masatoshi Arai

Yoshitaka Komuro

Masaru Takeshita

Yasuhiro Yoshii

Takumi Namiki

Satoshi Maemori

Kenji Seki

Aya Momozawa

Eiichi Shimura

A surface treatment liquid capable of hydrophobizing a surface of a treatment target without including a silylation agent, a surface treatment method using the liquid, and a method for suppressing pattern collapse, including surface treatment by the surface treatment method. The liquid contains a nitrogen-containing heterocyclic compound as a water-repelling agent. A compound including one or more hydrocarbon groups which may be substituted with a halogen atom in which a total number of carbon atoms of the one or more hydrocarbon group is three or more, is used as the nitrogen-containing heterocyclic compound. The liquid may include only a nitrogen-containing heterocyclic compound having the above-described predetermined structure, as a water-repelling agent.

Surface treatment liquid, surface treatment method, and method for suppressing pattern collapse

A method of forming a photosensitive resin layer including laminating a photosensitive resin layer including a chemically amplified positive-type photosensitive resin composition which includes an acid generator which generates an acid upon light exposure and generates an acid by heating on a metal surface having catalytic activity, a resin whose solubility in alkali increases under the action of an acid, and an organic solvent, on an catalytic activity-containing metal surface of a substrate; and heating the photosensitive resin layer, so that the solubility in alkali of the photosensitive resin layer increases as the layer becomes closer to an interface with the substrate.

Method for forming photosensitive resin layer, method for producing photoresist pattern, and method for producing plated molded article

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the acid generator component (B) including a sulfonium compound (B1) having a sulfonio group and an anion group represented by general formula (b1-r-1) shown below in one molecule thereof (wherein Yrepresents a divalent linking group or a single bond; Lrepresents an ester bond or a single bond; Vrepresents a divalent hydrocarbon group having a fluorine atom; and n represents 0 or 1, provided that, when Lrepresents a single bond, n=1). 

Resist composition, method of forming resist pattern, and compound

A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and Rrepresents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.

Resist composition and method of forming resist pattern

A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150&#xb0; C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.

Growing community of inventors

Kawasaki, Japan

Shinji Kumada