Matsushita Electric Industrial Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Central Glass Company, Limited

Mitsubishi Denki Kabushiki Kaisha

Other

Panasonic Corporation

Matsushita Electronic Industrial Co., Ltd

Atsushita Electric Industrial Co., Ltd.

Shinji Kishimura

Masaru Sasago

Masayuki Endo

Jun Hatakeyama

Yuji Harada

Kazuhiko Maeda

Yoshio Kawai

Michitaka Ootani

Haruhiko Komoriya

Satoru Miyazawa

Mitsuru Ueda

Kentaro Tsutsumi

Jun Watanabe

Akiko Katsuyama

Masamitsu Shirai

Toshiaki Fukuhara

Hirokazu Imori

Masahiro Tsunooka

Kazuhiro Yamanaka

Tsuyohiko Fujigaya

Yasuhiro Yoshida

Hirofumi Fujioka

Hitoshi Nagata

Hiroyuki Nakajima

Mutsuo Nakashima

Masahir Tsunooka

Akemi Fukui

A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and Ris a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.

Resist material and pattern formation method

A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: 

Sulfonamide compound, polymer compound, resist material and pattern formation method

A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R, R, R, R, and Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and Ris a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.

A chemically amplified resist composition using an alternating copolymer of &#x3b1;-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.

Polymer, resist composition, and patterning process

The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; Ris a methylene group, an oxygen atom, a sulfur atom or &#x2014;SO&#x2014;; R, R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, &#x2014;OR, COR, &#x2014;R&#x2014;ORor &#x2014;R&#x2014;COR, at least one of R, R, Rand Rincluding &#x2014;OR, &#x2014;COR, &#x2014;R&#x2014;ORor &#x2014;R&#x2014;COR(wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0&#x3c;a&#x3c;1; 0&#x3c;b&#x3c;1; and c is 0 or 1.

Polymer compound, resist material and pattern formation method

A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.

Polymers, resist compositions and patterning process

A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein Ris F or fluoroalkyl, Ris a single bond or an alkylene or fluoroalkylene, Rand Rare H, F, alkyl or fluoroalkyl, at least one of Rand Rcontains F, Ris H or an acid labile group, Ris an acid labile group, adhesive group, alkyl or fluoroalkyl, and 'a' is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance. 

A polymer comprising recurring units of (1a) or (1b) wherein Ris an acid labile group, adhesive group or fluoroalkyl, Ris H, F, alkyl or fluoroalkyl, Rand Reach are a single bond, alkylene or fluoroalkylene, Ris H or an acid labile group, 'a' is 1 or 2, 0&#x3c;U11&#x3c;1 and 0&#x3c;U12&#x3c;1 and having a Mw of 1,000&#x2013;500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance. 

A sulfonate compound having formula (1) is novel wherein Rto Rare H, F or Calkyl or fluoroalkyl, at least one of Rto Rcontains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance 

Sulfonates, polymers, resist compositions and patterning process

A resist composition comprising a base polymer having sulfone or sulfonate units introduced therein is sensitive to high-energy radiation below 300 nm, is endowed with excellent adherence to substrates while maintaining transparency, and is suited for lithographic microprocessing.

A polymer comprising recurring units having a partial structure of formula (1) wherein Ris a single bond or alkylene or fluoroalkylene, Rand Rare H or alkyl or fluoroalkyl, at least one of Rand Rcontains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance 

The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6: wherein R, R, R, R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R, Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; Ris a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a carbon number not less than 1 and not more than 20; 0&#x3c;a&#x3c;1; 0&#x3c;b&#x3c;1; d is 1 or 2; e is 0, 1, 2, 3 or 4; and 1&#x2266;d+e&#x2266;5.

A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator: Chemical Formula 1: wherein Ris a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and Ris a protecting group released by an acid.

Pattern-forming material and method of forming pattern

A ternary copolymer comprising units of &#x3b1;-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of &#x3b1;-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Growing community of inventors

Itami, Japan

Shinji Kishimura