Tokyo Electron Limited

Oki Semiconductor Co., Ltd.

Shinji Kawada

Seiji Samukawa

Motoki Noro

Kazushi Kaneko

Ikuo Kurachi

Takehiro Tanikawa

Hideo Kato

Kazunori Funazaki

Masaki Inoue

Jun Hashimoto

Yuji Otsuka

Takayuki Semoto

Kazuhisa Ishii

Tai-Chuan Lin

Youichi Yatagai

A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

Plasma processing method and plasma processing apparatus

A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Microwave automatic matcher and plasma processing apparatus

A plasma treatment device includes a dielectric window containing SiO. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CHF, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CHF, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.

Plasma treatment method and plasma treatment device

Disclosed is a method of forming a dummy gate in manufacturing a field effect transistor. The method includes a first process of exposing a workpiece having a polycrystalline silicon layer to plasma of HBr gas, and a second process of further exposing the workpiece to the plasma of HBr gas after the first process. The first process includes etching the polycrystalline silicon layer to form a dummy semiconductor part having a pair of side surfaces from the polycrystalline silicon layer, and forming a protection film based on a by-product of etching on the pair of side surfaces in such a manner that the thickness of the protection film becomes smaller toward a lower end of the dummy semiconductor part.

Method for forming dummy gate

Disclosed is a means for stabilizing quality of a semiconductor device by preventing projections from being formed in the bottom of a through hole. A method of manufacturing a semiconductor device includes a process of forming a through hole reaching a metal nitride layer through an interlayer insulating layer on a semiconductor wafer on which the wiring layer, the metal nitride layer formed on the wiring layer, and the interlayer insulating layer covering the wiring layer and the metal nitride layer are formed. The through hole forming process includes: a first etching step of etching the interlayer insulating layer by an anisotropic etching method with the semiconductor wafer set to a first temperature; and a second etching step of etching an upper surface of metal nitride layer by an anisotropic etching method with the semiconductor wafer set to a second temperature higher than the first temperature.

Method of manufacturing a semiconductor device

A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in between; a resist pattern formed on the first electrode and the second electrode; a contact hole formed in the first electrode and the second electrode; and an organic film deposited on the sidewall of the contact hole, includes the steps of: placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times; establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode; and measuring the resistivity of the organic film between the first electrode and the second electrode.

Method of measuring resistivity of sidewall of contact hole

An ultraviolet light monitoring system includes first and second electrodes, an evaluation subject film and a power source. The first and second electrodes are opposingly disposed and attract holes which are generated in accordance with irradiation of ultraviolet light. The evaluation subject film is formed in a vicinity of the first and second electrodes, and is a subject of evaluation of damage caused by the irradiation of ultraviolet light. The power source, at times of monitoring of the ultraviolet light, applies a predetermined bias to a series path formed by the first electrode, a gap between the first and second electrodes, and the second electrode.

Growing community of inventors

Miyagi, Japan

Shinji Kawada