Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Holdings Corporation

Shinji Ishitani

Kazushi Higashi

Akio Furusawa

Tatsuo Sasaoka

Kiyohiro Hine

Naoki Suzuki

Daido Komyoji

Renki Yamazaki

Kouichi Yoshida

Misato Takahashi

Takashi Omura

There is provided a bonding material which forms a bonding portion between two objects, which material contains (1) first metal particles comprising a first metal and having a median particle diameter in the range of 20 nm to 1 &#x3bc;m, and (2) second metal particles comprising, as a second metal, at least one alloy of Sn and at least one selected from Bi, In and Zn and having a melting point of not higher than 200&#xb0; C.

Bonded structure and bonding material

To provide a method for efficiently producing metal microparticles having a particle diameter of 1 &#x3bc;m to 10 &#x3bc;m, and a device for producing the same. A metal microparticle production method is used, which includes a particle generating step of generating primary particles by irradiating a metal lump in a solvent in a first tank with an ultrasonic wave, and a particle splitting step of irradiating the primary particles with an ultrasonic wave in a solvent in a second tank and splitting the primary particles to produce secondary particles. Further, a metal microparticle production device is used, which includes: a first tank that has a solvent and a metal lump; a first heating unit that heats the solvent in the first tank; a first ultrasonic vibrator that is disposed in the first tank and irradiates the metal lump with an ultrasonic wave to generate primary particles; a second tank that has the solvent and the primary particles; and a second ultrasonic vibrator that irradiates the primary particles with an ultrasonic wave to split the primary particles.

Metal microparticle production method and metal microparticle production device

An electronic component includes an electronic element that includes a lead portion, a sealing body that seals the electronic element in a state where an end portion of the lead portion is exposed, a first current collector that is formed on the sealing body and is connected to the end portion, and a first terminal that includes a first portion which is sealed in the sealing body and is connected to the first current collector.

Electronic component

The joining apparatus includes a suction nozzle for holding an electronic component, a board stage for holding a circuit board in opposition to the electronic component, and an excimer ultraviolet lamp placed at an irradiation position between the positioned electronic component and circuit board. In such a joining apparatus, ultraviolet irradiation to Au bumps of the electronic component and ultraviolet irradiation to board electrodes of the circuit board are performed concurrently by the excimer ultraviolet lamp to execute a cleaning process of the two metallic portions. Thereafter, ultrasonic vibrations are imparted to the two metallic portions while those metallic portions are kept in contact with each other, by which metal joining between the two metallic portions is fulfilled.

Joining apparatus with UV cleaning

In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, the occurrence of a faulty junction after mounting can be suppressed by placement of the n-bump at center of the bump array, because the position at the center is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.

Semiconductor light emitting device and semiconductor light emitting device mounted board

An electronic element package includes a plate-like sensor substrate with a detector formed thereon, and a plate-like first cover substrate and a plate-like second cover substrate joined directly or indirectly to a top surface and a bottom surface, respectively, of the sensor substrate so that the sensor substrate is located between the first and second cover substrates, the sensor substrate including, a frame surrounding the detector via a space, beams joining the detector to the frame, and an electrode disposed on the frame and electrically connected to the detector, one of the first cover substrate and the second cover substrate having a through-hole which contacts an electrode. The electronic element package enables a reduction in thickness and offers improved reliability.

Electronic element package and method of manufacturing the same

A first container member () mounting an electronic device () thereon and a second container member () are bonded with an adhesive () or a metal layer (). Thus an inner space () is formed and the electronic device can be closed in the inner space at a low temperature. In the case the adhesive is used, an exposed surface of the adhesive is coated with a metal film () to improve the closeness of the inner space. Further, an electronic device () may be mounted on the second container member so as to increase the electronic device arrangement density in a packaged electronic device.

Packaged electronic element and method of producing electronic element package

In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 &#x3bc;m.

Semiconductor device

An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.

Semiconductor light-emitting element, manufacturing method and mounting method of the same and light-emitting device

A positive electrode drive unit enables a positive electrode to be repeatedly rotated about the center of the positive electrode to vary a distance between the positive electrode and an atom emission unit. A control unit receives input data which is set to obtain a desired atom density distribution by displacement of the positive electrode, and the control unit outputs a drive control signal for displacing the positive electrode to the positive electrode drive unit. The positive electrode drive unit is stopped during running by the control unit, or a drive speed of the positive electrode drive unit is changed by the control unit. Therefore, a residence time of each attitude is changed in the positive electrode to vary the atom density per unit time.

Growing community of inventors

Hyogo, Japan

Shinji Ishitani