Tokyo Electron Limited

Shinji Irie

Takehiko Orii

Yasuo Asada

Ayano Hagiwara

Tatsuya Yamaguchi

Hirofumi Sakai

Subhadeep Kal

Aelan Mosden

Nobuhiro Takahashi

Jun Lin

Daisuke Ito

Kenji Tanouchi

Kakeru Wada

Embodiments provide a non-plasma etch, such as a gas-phase and/or remote plasma etch, of titanium-containing material layers with tunable selectivity to other material layers. A substrate is received within a process chamber, and the substrate has exposed material layers including a titanium-containing material layer and at least one additional material layer. The additional material layer is selectively etched with respect to the titanium-containing material layer by exposing the substrate to a controlled environment including a halogen-containing gas. For one embodiment, the halogen-containing gas includes a fluorine-based gas. For one embodiment, the titanium-containing material layer is a titanium or a titanium nitride material layer. For one embodiment, the additional material layer includes tungsten, tungsten oxide, hafnium oxide, silicon oxide, silicon-germanium, silicon, silicon nitride, and/or aluminum oxide. A non-selective etch with respect to the titanium-containing material layer can be performed by modulating the process parameters such as temperature.

Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an Fgas and the second fluorine-containing gas including at least a ClFgas, an IFgas, an IFgas or an SFgas.

Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

Etching method and etching apparatus

The present invention is a boat for a thermal process including: a plurality of pillars; a plurality of claws formed in each of the pillars in a height direction at predetermined intervals; a plurality of supporting plates mounted in a tier-like manner between the plurality of pillars via the claws, each supporting plate having an object-to-be-processed mounting surface on which an object to be processed can be mounted; and a groove and a through hole provided in the object-to-be-processed mounting surface. According to the present invention, the groove and the through hole provided in the object-to-be-processed mounting surface form an air layer between the object-to-be-processed mounting surface of the supporting plate and the object to be processed, so that sticking of the object to be processed can be inhibited. Thus, even during a thermal process at a high temperature, generation of slip caused by the sticking of the object to be processed can be inhibited.

Boat for heat treatment and vertical heat treatment equipment

Growing community of inventors

Nirasaki, Japan

Shinji Irie