Sony Corporation

Shinji Imaizumi

Koji Kadono

Nozomi Takiguchi

Masanori Iwasaki

Nozomi Kimura

An image pickup device according to the present technology that includes an on-chip lens, a low-refractive index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive index material. The low-refractive index layer is formed to be flat on the on-chip lens, the low-refractive index layer being formed of a low-refractive index material. The infrared absorption layer is formed of an infrared absorption material including at least one kind of organic infrared absorption dye and binder resin, a glass transition temperature of the binder resin being not less than 100&#xb0; C., a concentration of the infrared absorption dye in the infrared absorption material being not less than 15 wt % and not more than 50 wt %, the infrared absorption layer being laminated above the low-refractive index layer.

Image pickup device

To provide an electromagnetic wave detection element capable of detecting an electromagnetic wave with an arbitrary wavelength and being miniaturized. An electromagnetic wave detection element according to the present technology includes an antenna unit and a detection unit. The antenna unit includes a first conductive layer, a first dielectric layer that is laminated on the first conductive layer and is constituted of a dielectric body, and a first graphene layer that is laminated on the first dielectric layer and is made of graphene. The detection unit includes a second conductive layer that is made of a conductive material and is separated from the first conductive layer, a second dielectric layer that is laminated on the second conductive layer and is constituted of a dielectric body, and a second graphene layer that is laminated on the second dielectric layer, is made of graphene, and is separated from the first graphene layer.

Electromagnetic wave detection element, electromagnetic wave sensor, electronic apparatus, and structural body

A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

Manufacturing method for forming a thin film between two terminals

An imaging device, comprising: an infrared light absorption layer including a cyanine dye represented by Chemical Formula (A) below: wherein Rand Rare selected from the group consisting of: a chain alkyl group, a cyclic alkyl group, a phenyl group, and a benzyl group; wherein the chain alkyl group and the cyclic alkyl group including at least one group member selected from the group consisting of: 1) a first group having one or more hydrogen atoms in a first alkyl group substituted with at least one functional group selected from the group consisting of: a halogen atom, an alkoxy group, an alkanoloxy group, an amino group, a thiol group, and a mercapto group; 2) a second group having at least one reactive group selected from the group consisting of: a vinyl group, an acrylic group, a carbonyl group, a carboxyl group, an alkenyl group, an alkenyloxy group, an alkoxycarbonyl group, a nitrile group, a carboxyl group, a carbonyl group, a sulfonyl group, a sulfamoyl group, a carbamoyl group, a benzoyloxy group, and a cyano group, wherein the reactive group is any one of introduced at a terminal alkyl group of at least one of the chain alkyl group and the cyclic alkyl group and positioned two or more carbon atoms away from an indoline ring; 3) an unsubstituted chain alkyl group; and 4) an unsubstituted cyclic alkyl group; and wherein Xrepresents an anion.

Image device and imaging apparatus

An image pickup device according to the present technique includes an on-chip lens, a low-refractive-index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive-index material. The low-refractive-index layer is formed flat on the on-chip lens and formed of a low-refractive-index material. The infrared absorption layer is formed of an infrared absorption material and laminated as a higher layer than the low-refractive-index layer. The infrared absorption material includes an infrared absorption pigment and a binder resin, the binder resin, being a synthetic resin constituted of a siloxane skeleton alone or a synthetic resin constituted of a siloxane skeleton part and a partial skeleton having a low reaction activity in an oxygen part.

Growing community of inventors

Kanagawa, Japan

Shinji Imaizumi