Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Hitachi Astemo Ltd.

Shinji Hiramitsu

Koji Sasaki

Satoshi Matsuyoshi

Osamu Ikeda

Masato Nakamura

Kinya Nakatsu

Takeshi Tokuyama

Tokihito Suwa

Yusuke Takagi

Shosaku Ishihara

Ryouichi Kajiwara

Hiroyuki Ohta

Hiroshi Hozoji

Yujiro Kaneko

Kaoru Uchiyama

Nobutake Tsuyuno

Kazuhiro Suzuki

Eiichi Ide

Akira Matsushita

Akihiro Tamba

Takahiro Shimura

Hirokazu Inoue

Tadaaki Kariya

Masato Higuma

Atsushi Koshizaka

Keiji Kawahara

Hiroshi Tokuda

A power module includes a plurality of semiconductor devices constituting upper/lower arms of an inverter circuit, a plurality of conductive plates arranged to face electrode surfaces of the semiconductor devices and a module case configured to accommodate the semiconductor devices and conductive plates, wherein the module case includes a heat-radiation member made of plate-like metal and facing a surface of the conductive plate and a metallic frame body having an opening that is closed by the heat-radiation member, and wherein a heat-radiation fin unit having a plurality of heat-radiation fins vertically arranged thereon is provided at a center of the heat-radiation member, and a joint portion with the frame body is provided at an peripheral edge of the heat-radiation member, and the heat radiation member has a heat conductivity higher than that of the frame body, and the frame body has a higher rigidity than that of the heat-radiation member.

Power module and power conversion apparatus using same

A power semiconductor module includes: a circuit body having a power semiconductor element and a conductor member connected to the power semiconductor element; a case in which the circuit body is housed; and a connecting member which connects the circuit body and the case. The case includes: a first heat dissipating member and a second heat dissipating member which are disposed in opposed relation to each other while interposing the circuit body in between; a side wall which joins the first heat dissipating member and the second heat dissipating member; and an intermediate member which is formed on the periphery of the first heat dissipating member and connected to the side wall, the intermediate member including a curvature that is projected toward a housing space of the case.

Power semiconductor module and power conversion device

A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

Power semiconductor module and manufacturing method thereof

A power module includes: a sealing body including a semiconductor element having a plurality of electrode surfaces, a first conductor plate connected to one electrode surface of the semiconductor element via solder, and a sealing material for sealing the semiconductor element and the first conductor plate, the sealing body having at least a first surface and a second surface on the opposite side of the first surface; and a case for housing the sealing body. The case is configured by a first heat radiation plate opposed to the first surface of the sealing body, a second heat radiation plate opposed to the second surface of the sealing body, and an intermediate member that connects the first heat radiation plate and the second heat radiation plate. The intermediate member has a first thin section having thickness smaller than the thickness of the first heat radiation plate, more easily elastically deformed than the first heat radiation plate, and formed to surround the first heat radiation plate. The sealing body is pressed against and fixed to the second heat radiation plate via the first heat radiation plate by elastic force generated in the first thin section.

Power module and power module manufacturing method

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a CuSncontent greater than a eutectic content.

Semiconductor device and automotive ac generator

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Semiconductor device

Semiconductor device and automotive AC generator

A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4&#xb1;0.05 mm&#x3c6;, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.

Power semiconductor module

The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250&#xb0; C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

A semiconductor device is provided, in which buffer layers having a coefficient of linear expansion of 3&#xd7;10&#x2212;6/&#xb0; C. to 8&#xd7;10&#x2212;6/&#xb0; C. are joined to upper and lower surfaces of a silicon chip through a Pb-free solder having a thickness of not more than 0.05 mm and a melting point of not less than 250&#xb0; C. The upper surface of the upper buffer layer and the lower surface of the lower buffer layer are respectively joined to a lead and a base through Pb-free solders having a thickness of not less than 0.15 mm and a melting point of not less than 250&#xb0; C.

Growing community of inventors

Kashiwa, Japan

Shinji Hiramitsu