Tdk Corporation

Sae Magnetics (h.k.) Limited

Fujitsu Corporation

The University of Tokyo

Headway Technologies, Incorporated

Sun Star Technology, Inc.

Japan Crescent, Inc.

Tdk Corpoartion

Shinji Hara

Tsutomu Chou

Yoshihiro Tsuchiya

Koji Shimazawa

Daisuke Miyauchi

Eiji Komura

Tomohito Mizuno

Takahiko Machita

Kosuke Tanaka

Susumu Aoki

Naoki Ohta

Seiichi Takayama

Ryo Hosoi

Hironobu Matsuzawa

Maiko Shirokawa

Kei Hirata

Tetsuya Roppongi

Toshiyuki Ayukawa

Nobuyuki Mori

Akimasa Kaizu

Kazuya Maekawa

Yasuhiro Ito

Norikazu Ota

Tsuyoshi Suzuki

Takayasu Kanaya

Cherng-Chyi Han

Xuhui Jin

Kiyoshi Noguchi

Keita Kawamori

Weihao Xu

Tobias Maletzky

Naomichi Degawa

Yasutoshi Fujita

Tomotake Sasaki

Hitoshi Yanami

Yiming Wang

Junji Kaneko

Kouji Shimazawa

Mitsuo Otsuki

Hirokazu Takahashi

Suguru Fujita

Takeo Kagami

Migaku Takahashi

Yuji Kakinuma

Richard R Heuser

Hirokazu Anai

Satoshi Tomikawa

Hidenao Iwane

Takeshi Tsutsumi

Tetsuhito Shinohara

Atsushi Shimura

Kazuaki Takanuki

Masakiyo Tsunoda

Yohei Koyanagi

Hideki Tanzawa

Takahiko Izawa

Tsuyoshi Ichiki

Youichi Ando

Osamu Nakada

Zhengyao Tang

Tomihito Mizuno

Eijii Komura

Chimoto Sugiyama

The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

Structure body and electromagnetic wave sensor

A structure body includes: an electromagnetic wave detector; and a pair of arm portions that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element and an electromagnetic wave absorber which covers at least a part of the temperature detection element. Each of the arm portions includes a wiring layer which is in a line shape and electrically connected to the temperature detection element, and protective layers, a part of each of which is disposed on corresponding one of both sides of the wiring layer. The protective layers are made of a material having a lower thermal conductivity than the wiring layer. In a short direction of the protective layers in a plan view, the wiring layer is positioned on an inward side of both end portions of the protective layers in the short direction.

An electromagnetic wave sensor has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each of the electromagnetic wave absorbers at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each of the electromagnetic wave absorbers approaches the second extending portions with the connection portions as fulcrums.

Electromagnetic wave sensor

An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

An electromagnetic wave sensorhas electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.

Thermistor element and electromagnetic wave sensor

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

Resistive element array circuit, resistive element array circuit unit, and infrared sensor

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

Heat utilizing device

An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.

High-frequency device

The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

Magnetoresistance effect device

A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Magnetoresistance effect device and magnetoresistance effect module

A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other. The relative angle between the first and second circuit units in a predetermined cross product direction is 90 degrees or less.

Growing community of inventors

Tokyo, Japan

Shinji Hara