Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Osaka University

Senju Metal Industry Co., Ltd.

Shinji Fukumoto

Tadayoshi Nakatsuka

Katsushi Tara

Takeshi Sakamoto

Shinji Yamamoto

Minoru Ueshima

Kaname Motoyoshi

Kenichi Hidaka

Atsushi Watanabe

Tomohiko Nakamura

Kozo Fujimoto

Satoshi Watanabe

Shu Inoue

Michiya Matsushima

Takeshi Kan

An method of mounting electronic component includes: providing a connecting layer between a wiring and an electronic component, the connecting layer including a conductive layer formed of a solder powder-containing resin composition containing thermosetting resin, solder powder, and a reducing agent and one or two layers of a thermoplastic resin layer formed of thermoplastic resin; and electrically connecting the electronic component to the wiring through the connecting layer.

Method of mounting electronic component to circuit board

The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

High-frequency switching device and semiconductor

High-frequency switching device and semiconductor device

A semiconductor apparatus is provided which makes it possible to reduce the number of control terminals required for switching through paths of a high frequency signal, simplify the circuit configuration for controlling the terminals, improve an isolation characteristic between on path and off path of a through FET, and obtain a sufficiently high isolation. In this semiconductor apparatus, one specific through FET and each of shunt FETs connected to each of through FETs other than the one specific through FET are simultaneously turned on in response to the same control signal inputted to the same control terminal. Thus, when a high frequency signal leaks from an output terminal to the signal path of the through FET having been turned on, through the signal paths of the through FETs having been turned off, the high frequency signal can be released to GND through the shunt FET having been turned on.

Semiconductor switching circuit for switching the paths of a high frequency signal in a mobile communications unit

An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an electrical connection between the input/output terminals. The switch is constituted by a multi-gate field effect transistor including a plurality of gates located between source and drain spaced from each other on a semiconductor layer. A bias voltage is applied to an inter-gate region of the semiconductor layer between the gates. The bias voltage is equal to or lower than 90% of a high-level voltage, which is a voltage for turning the multi-gate field effect transistor ON, in a state where the multi-gate field effect transistor is ON, and is equal to or higher than 80% of the high-level voltage and equal to or lower than the high-level voltage in a state where the multi-gate field effect transistor is OFF.

RF switching circuit for use in mobile communication systems

A first low noise amplifier (LNA) is provided with a control terminal () for turning of/off the low noise amplifier (LNA). Power terminals of the low noise amplifier (LNA) and a second low noise amplifier (LNA) are commonly connected, and are connected to a power supply () via a power supply switch (). Ground terminals of the two amplifiers (LNA) and (LNA) are commonly connected, and a constant current source () is connected between the common terminal and the ground. The amplifiers (LNA) and (LNA) are turned on/off by switching the voltage applied to the control terminal () of the first low noise amplifier (LNA) between a high potential and a low potential. The power supply switch () is turned off during signal transmission. Therefore, an LNA block can be provided by using only one power supply switch (), whereby it is possible to reduce the number of devices from that in the prior art, thereby realizing a reduction in the size thereof.

Semiconductor apparatus and communication apparatus

Growing community of inventors

Mishima-gun, Japan

Shinji Fukumoto