Fuji Electric Co., Ltd.

Shinji Fujikake

Koichi Murata

Hidekazu Tsuchida

Toshiaki Sasaki

Makoto Shimosawa

Aki Takigawa

Hiromitsu Ota

Porponth Sichanugrist

Tae Tawara

Hiroki Sato

A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first semiconductor type, a first semiconductor layer of the first semiconductor type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first semiconductor type, trenches, a gate insulating film, and gate electrodes. The silicon carbide semiconductor device has a minimum value of a subthreshold slope factor (subthreshold swing) in a subthreshold region in a range from 0.24V/dec. to 0.3V/dec.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A semiconductor device including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided at a front surface of the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration higher than that of the semiconductor substrate, a trench penetrating the first semiconductor region and the second semiconductor layer, to reach the first semiconductor layer, and a gate electrode provided in the trench, via a gate insulating film. The trench has a sidewall that includes a terrace portion, surface roughness of the terrace portion being at most 0.1 nm.

Semiconductor device and method of manufacturing semiconductor device

The present invention provides a photovoltaic module with bypass diodes that has a high electricity generating capacity per unit area and high productivity. This photovoltaic module includes a photovoltaic cell assembly in which a plurality of photovoltaic cells are electrically connected in series, and a diode assembly in which a plurality of diodes are formed on a substrate in the arrangement that is consistent with the arrangement of the photovoltaic cells to which the diodes are to be attached. The diode assembly is disposed on a non-light receiving side of the photovoltaic cells, and the diodes are electrically connected to the photovoltaic cells. The photovoltaic cell assembly and the diode assembly are sealed and united by a sealant.

Photovoltaic module

The film thickness of a p-type semiconductor was adjusted in order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage. In order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage, it was also shown to be favorable to control acceptor impurity levels in p-type semiconductors. Irradiation conditions of more than 10 hours at 1 SUN or (light intensity &lsqb;SUN&rsqb;) &times;10 or more (time &lsqb;h&rsqb;)>10 were utilized.

Non-single-crystal solar cell

Solar cells are formed of (a) a transparent substrate; (b) a transparent electrode; (c) a first doped layer comprising amorphous silicon oxide, optionally including nitrogen, said first doped layer containing a dopant whereby the first doped layer is of a first conductivity type and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.; (d) a layer of intrinsic amorphous silicon; (e) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type; and (f) a second electrode. The first doped layer may be of either n-type or p-type conductivity. The first doped layer can be formed over the transparent electrode by decomposing a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O or CO.sub.2, and a dopant, in a hydrogen carrier at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type. An interfacial layer of intermediate gap may also be included when the first doped layer is a p-type layer. Also described is a method for the formation of an amorphous silicon-oxide film to be utilized in making the thin-film solar cell.

Growing community of inventors

Kanagawa, Japan

Shinji Fujikake